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- W4386332382 abstract "Abstract Highly transparent resistive-switching (RS) devices were fabricated by growing amorphous tantalum pentoxide (a-Ta 2 O 5 ) and indium tin oxide (a-ITO) thin films on barium-borosilicate glass (7059) substrates, using electron beam evaporation. These layers exhibited the transmittance greater than ~ 85% in the full visible region and showed RS behavior and battery-like IV characteristics. The overall characteristics of RS can be tuned using the top electrode and the thickness of a-Ta 2 O 5 . Thinner films showed a conventional RS behavior, while thicker films with metal electrodes showed a battery-like characteristic, which could be explained by additional redox reactions and non-Faradaic capacitive effects. Devices having battery-like IV characteristics showed higher enhanced, retention and low-operation current." @default.
- W4386332382 created "2023-09-01" @default.
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- W4386332382 date "2023-08-31" @default.
- W4386332382 modified "2023-10-18" @default.
- W4386332382 title "Resistive switching and battery-like characteristics in highly transparent Ta2O5/ITO thin-films" @default.
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- W4386332382 doi "https://doi.org/10.1038/s41598-023-40891-2" @default.
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