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- W4386361389 abstract "We have analyzed the effect of structural asymmetry and aperture position for field-effect transistor (FET)-based plasmonic terahertz (THz) detector with integrated aperture by using 65-nm CMOS process. By applying structural asymmetry between the source and drain in FET, we obtained 9.3 mV (7-fold) photoresponse <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$(Delta u)$</tex> in comparison to symmetric FET for aperture positioned at gate. In addition, by asymmetry in feeding the incoming THz wave with aperture positioned at drain, we have experimentally demonstrated highly enhanced detection performance followed by 18.5 mV (2-fold) <tex xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>$Delta u$</tex> in comparison to aperture positioned at gate." @default.
- W4386361389 created "2023-09-02" @default.
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- W4386361389 date "2023-07-02" @default.
- W4386361389 modified "2023-09-27" @default.
- W4386361389 title "Highly Sensitive Plasmonic Terahertz Detector with Integrated Sub-Wavelength Aperture Based on Asymmetric FET in 65-nm CMOS Technology" @default.
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- W4386361389 doi "https://doi.org/10.1109/nano58406.2023.10231290" @default.
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