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- W4386466682 abstract "Bottom-up synthesized graphene nanoribbons (GNRs) are increasingly attracting interest due to their atomically controlled structure and customizable physical properties. In recent years, a range of GNR-based field-effect transistors (FETs) has been fabricated, with several demonstrating quantum-dot (QD) behavior at cryogenic temperatures. However, understanding the relationship between the cryogenic charge-transport characteristics and the number of the GNRs in the device is challenging, as the length and location of the GNRs in the junction are not precisely controlled. Here, we present a methodology based on a dual-gate FET that allows us to identify different scenarios, such as single GNRs, double or multiple GNRs in parallel, and a single GNR interacting with charge traps. Our dual-gate FET architecture therefore offers a quantitative approach for comprehending charge transport in atomically precise GNRs." @default.
- W4386466682 created "2023-09-07" @default.
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- W4386466682 date "2023-09-06" @default.
- W4386466682 modified "2023-10-14" @default.
- W4386466682 title "Determining the Number of Graphene Nanoribbons in Dual-Gate Field-Effect Transistors" @default.
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- W4386466682 doi "https://doi.org/10.1021/acs.nanolett.3c01931" @default.
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