Matches in SemOpenAlex for { <https://semopenalex.org/work/W4386506682> ?p ?o ?g. }
- W4386506682 endingPage "107201" @default.
- W4386506682 startingPage "107201" @default.
- W4386506682 abstract "Epitaxial graphene grown on silicon carbide (SiC/graphene) is a promising solution for achieving a high-precision quantum Hall resistance standard. Previous research mainly focused on the quantum resistance metrology of n-type SiC/graphene, while a comprehensive understanding of the quantum resistance metrology behavior of graphene with different doping types is lacking. Here, we fabricated both n- and p-type SiC/graphene devices via polymer-assisted molecular adsorption and conducted systematic magneto-transport measurements in a wide parameter space of carrier density and temperature. It is demonstrated that n-type devices show greater potential for development of quantum resistance metrology compared with p-type devices, as evidenced by their higher carrier mobility, lower critical magnetic field for entering quantized Hall plateaus, and higher robustness of the quantum Hall effect against thermal degeneration. These discrepancies can be reasonably attributed to the weaker scattering from molecular dopants for n-type devices, which is further supported by the analyses on the quantum interference effect in multiple devices. These results enrich our understanding of the charged impurity on electronic transport performance of graphene and, more importantly, provide a useful reference for future development of graphene-based quantum resistance metrology." @default.
- W4386506682 created "2023-09-08" @default.
- W4386506682 creator A5005300906 @default.
- W4386506682 creator A5011607018 @default.
- W4386506682 creator A5018471954 @default.
- W4386506682 creator A5042649116 @default.
- W4386506682 creator A5062739980 @default.
- W4386506682 creator A5067398779 @default.
- W4386506682 creator A5075771135 @default.
- W4386506682 creator A5088664989 @default.
- W4386506682 date "2023-10-01" @default.
- W4386506682 modified "2023-10-18" @default.
- W4386506682 title "Contrasting transport performance of electron- and hole-doped epitaxial graphene for quantum resistance metrology" @default.
- W4386506682 cites W1582648182 @default.
- W4386506682 cites W1865418042 @default.
- W4386506682 cites W1992506968 @default.
- W4386506682 cites W1994560736 @default.
- W4386506682 cites W2006717333 @default.
- W4386506682 cites W2018167531 @default.
- W4386506682 cites W2020579599 @default.
- W4386506682 cites W2022106697 @default.
- W4386506682 cites W2022235068 @default.
- W4386506682 cites W2022365350 @default.
- W4386506682 cites W2024293372 @default.
- W4386506682 cites W2026083456 @default.
- W4386506682 cites W2041124890 @default.
- W4386506682 cites W2041360683 @default.
- W4386506682 cites W2049841306 @default.
- W4386506682 cites W2058122340 @default.
- W4386506682 cites W2061091612 @default.
- W4386506682 cites W2063964244 @default.
- W4386506682 cites W2065391501 @default.
- W4386506682 cites W2070540519 @default.
- W4386506682 cites W2087980253 @default.
- W4386506682 cites W2095809347 @default.
- W4386506682 cites W2097967079 @default.
- W4386506682 cites W2115581621 @default.
- W4386506682 cites W2118492507 @default.
- W4386506682 cites W2122131294 @default.
- W4386506682 cites W2124883978 @default.
- W4386506682 cites W2125284466 @default.
- W4386506682 cites W2126951003 @default.
- W4386506682 cites W2128339258 @default.
- W4386506682 cites W2129706268 @default.
- W4386506682 cites W2141484758 @default.
- W4386506682 cites W2153523500 @default.
- W4386506682 cites W2171365600 @default.
- W4386506682 cites W2283376581 @default.
- W4386506682 cites W2429233881 @default.
- W4386506682 cites W2547074225 @default.
- W4386506682 cites W2610320545 @default.
- W4386506682 cites W2772050437 @default.
- W4386506682 cites W2783909962 @default.
- W4386506682 cites W2803150708 @default.
- W4386506682 cites W2898272911 @default.
- W4386506682 cites W2951967509 @default.
- W4386506682 cites W2963115598 @default.
- W4386506682 cites W2963904554 @default.
- W4386506682 cites W3102873980 @default.
- W4386506682 cites W3189156119 @default.
- W4386506682 cites W3213671686 @default.
- W4386506682 cites W69008143 @default.
- W4386506682 doi "https://doi.org/10.1088/0256-307x/40/10/107201" @default.
- W4386506682 hasPublicationYear "2023" @default.
- W4386506682 type Work @default.
- W4386506682 citedByCount "0" @default.
- W4386506682 crossrefType "journal-article" @default.
- W4386506682 hasAuthorship W4386506682A5005300906 @default.
- W4386506682 hasAuthorship W4386506682A5011607018 @default.
- W4386506682 hasAuthorship W4386506682A5018471954 @default.
- W4386506682 hasAuthorship W4386506682A5042649116 @default.
- W4386506682 hasAuthorship W4386506682A5062739980 @default.
- W4386506682 hasAuthorship W4386506682A5067398779 @default.
- W4386506682 hasAuthorship W4386506682A5075771135 @default.
- W4386506682 hasAuthorship W4386506682A5088664989 @default.
- W4386506682 hasConcept C106782819 @default.
- W4386506682 hasConcept C120665830 @default.
- W4386506682 hasConcept C121332964 @default.
- W4386506682 hasConcept C147120987 @default.
- W4386506682 hasConcept C159985019 @default.
- W4386506682 hasConcept C171250308 @default.
- W4386506682 hasConcept C190463098 @default.
- W4386506682 hasConcept C190474826 @default.
- W4386506682 hasConcept C191952053 @default.
- W4386506682 hasConcept C192562407 @default.
- W4386506682 hasConcept C195766429 @default.
- W4386506682 hasConcept C200369452 @default.
- W4386506682 hasConcept C26873012 @default.
- W4386506682 hasConcept C2780722187 @default.
- W4386506682 hasConcept C30080830 @default.
- W4386506682 hasConcept C49040817 @default.
- W4386506682 hasConcept C57863236 @default.
- W4386506682 hasConcept C62520636 @default.
- W4386506682 hasConcept C84114770 @default.
- W4386506682 hasConcept C95013731 @default.
- W4386506682 hasConceptScore W4386506682C106782819 @default.
- W4386506682 hasConceptScore W4386506682C120665830 @default.
- W4386506682 hasConceptScore W4386506682C121332964 @default.