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- W4386565917 abstract "We investigated the surface reaction of the thermal atomic layer etching (ALE) of Al2O3 film using fluorine (F) radicals and trimethylaluminum (TMA). As a strong fluorination source to replace HF, we used NF3 remote plasma to generate F radicals without spontaneous or anisotropic etching by ion bombardment. The mass was increased by F radicals and decreased by TMA. X-ray photoelectron spectroscopy (XPS) analysis showed that AlF3 and AlOxFy were formed by F radicals, and all AlF3 and a significant portion of AlOxFy were removed by TMA. At 250 °C, the etch per cycle (EPC) was fully saturated at 1.58 Å/cycle for the NF3 remote plasma of 4 s and the TMA pulse time of 3 s. Based on the saturation behavior, isotropic etching was demonstrated for the Al2O3 film prepared on a trench pattern. The EPC increased progressively with temperature from 0.1 Å/cycle at 198 °C to 4.2 Å/cycle at 320 °C. Since the thickness of the fluorinated layer did not increase significantly with increasing temperature, the removal step determined the EPC." @default.
- W4386565917 created "2023-09-10" @default.
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- W4386565917 date "2023-12-01" @default.
- W4386565917 modified "2023-09-28" @default.
- W4386565917 title "Surface reaction during thermal atomic layer etching of aluminum oxide films using fluorine radicals and trimethylaluminum" @default.
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- W4386565917 doi "https://doi.org/10.1016/j.apsusc.2023.158453" @default.
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