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• W4386618324 abstract "Abstract NiO x / β -Ga 2 O 3 p-n heterojunctions fabricated on <?CDATA $(mathop{2}limits^{unicode{x00305}}01),$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> <mml:mo>,</mml:mo> </mml:math> <?CDATA $(001),$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>001</mml:mn> <mml:mo stretchy=false>)</mml:mo> <mml:mo>,</mml:mo> </mml:math> and <?CDATA $(010)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>010</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> β -Ga 2 O 3 substrates show distinctly anisotropic electrical properties. All three devices exhibited excellent rectification ≥10 9 , and turn-on voltages >2.0 V. The <?CDATA $(010)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>010</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> device showed very different turn-on voltage, specific on-resistance, and reverse recovery time compared with <?CDATA $(mathop{2}limits^{unicode{x00305}}01)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> and <?CDATA $(001)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>001</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> devices. Moreover, it is calculated that the interface trap state densities for <?CDATA $(mathop{2}limits^{unicode{x00305}}01),$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mover accent=true> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> <mml:mo>̅</mml:mo> </mml:mover> <mml:mn>01</mml:mn> <mml:mo stretchy=false>)</mml:mo> <mml:mo>,</mml:mo> </mml:math> <?CDATA $(001),$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>001</mml:mn> <mml:mo stretchy=false>)</mml:mo> <mml:mo>,</mml:mo> </mml:math> and <?CDATA $(010)$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mo stretchy=false>(</mml:mo> <mml:mn>010</mml:mn> <mml:mo stretchy=false>)</mml:mo> </mml:math> plane devices are 4.3 × 10 10 , 7.4 × 10 10 , and 1.6 × 10 11 eV –1 cm –2 , respectively. These differences in the NiO x / β -Ga 2 O 3 heterojunctions are attributed to the different atomic configurations, the density of dangling bonds, and interface trap state densities." @default.
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• W4386618324 date "2023-09-01" @default.
• W4386618324 modified "2023-10-16" @default.
• W4386618324 title "Anisotropic electrical properties of NiO_<i>x</i>/β-Ga₂O₃ p-n heterojunctions on (2 ̅01), (001), and (010) crystal orientations" @default.
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