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- W4386743720 abstract "Disordering processes in oxide materials are complicated by the presence of interfaces, which can serve as either point defect sinks or accumulation sites; the response depends on factors such as interfacial structure, chemistry, and termination. We have characterized the disordering of epitaxial ${mathrm{Fe}}_{3}{mathrm{O}}_{4}(111)/{mathrm{Cr}}_{2}{mathrm{O}}_{3}(0001)$ thin film heterostructures after 400 keV ${mathrm{Ar}}^{2+}$ radiation at room temperature. The density of misfit dislocations in both the ${mathrm{Fe}}_{3}{mathrm{O}}_{4}$ overlayer and ${mathrm{Cr}}_{2}{mathrm{O}}_{3}$ buffer layer is varied by changing the thickness of ${mathrm{Cr}}_{2}{mathrm{O}}_{3}$ to be pseudomorphically strained to the ${mathrm{Al}}_{2}{mathrm{O}}_{3}$ (0001) substrate (5 nm thick) or partially relaxed (20 nm thick), as confirmed by Bragg filtering analysis of scanning transmission electron microscopy images. In both cases, irradiation leads to damage accumulation on the ${mathrm{Fe}}_{3}{mathrm{O}}_{4}$ side of the heterointerface, as shown by Rutherford backscattering spectrometry measurements in the channeling geometry. However, the interface with more misfit dislocations exhibits disordering at a faster rate than the less-defective interface. Likewise, layer-resolved electron energy loss spectroscopy reveals interfacial reduction of Fe after irradiation at the more defective interface. Intermixing of Cr across the interface is observed by atom probe tomography, which is likely facilitated by the generation of Cr interstitials in ${mathrm{Cr}}_{2}{mathrm{O}}_{3}$ under irradiation." @default.
- W4386743720 created "2023-09-15" @default.
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- W4386743720 date "2023-09-14" @default.
- W4386743720 modified "2023-10-15" @default.
- W4386743720 title "Role of structural defects in mediating disordering processes at irradiated epitaxial <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:msub><mml:mi>Fe</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=normal>O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mrow><mml:msub><mml:mi>Cr</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=normal>O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> interfaces" @default.
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- W4386743720 doi "https://doi.org/10.1103/physrevmaterials.7.093604" @default.
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