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• W4386763267 abstract "Atomic layer deposition (ALD) of HfO2 thin films was studied by using a novel Cl-free hafnium ALD precursor: tetrakis(1-(N,N-dimethylamino)-2-propoxy)hafnium [Hf(dmap)4]. This precursor is a liquid at room temperature and has been shown by differential scanning calorimetry (DSC) analysis to be stable at temperatures as high as 371 °C. Compared with the conventional Hf precursor tetrakis(ethylmethylamido)hafnium(IV) (TEMAH), Hf(dmap)4 exhibits a substantially greater decomposition temperature because of its alkoxide structure. Hf(dmap)4 is a volatile compound that shows a very clean thermogravimetry curve without decomposition or residue formation at 10 Torr. We performed ALD of HfO2 using Hf(dmap)4 with an oxidant of either O3 or H2O as an oxidant. As the wafer temperature was increased from 250 to 400 °C, the film growth rate slightly increased from 0.35 to 0.55 Å/cycle. Therefore, Hf(dmap)4 can be used for ALD at higher deposition temperatures than for TEMAH. However, the film growth rate was lowered by the sterically hindered ligand structure of the precursor. We evaluated the saturation behavior of the growth rate in experiments in which the Hf(dmap)4 supply time was varied from 5 to 30 s. As a result, a constant film growth rate was observed because of ALD saturation when the precursor supply time was 10 s or longer in the temperature range 350–400 °C. This result indicates that Hf(dmap)4 was not decomposed and behaved as an ALD precursor at 400 °C. We concluded that Hf(dmap)4 is a promising precursor for high-temperature ALD of HfO2 film for gate dielectrics, high-K capacitors, and HfO2-based ferroelectrics." @default.
• W4386763267 created "2023-09-16" @default.
• W4386763267 creator A5003209931 @default.
• W4386763267 creator A5041930406 @default.
• W4386763267 creator A5086182020 @default.
• W4386763267 date "2023-09-15" @default.
• W4386763267 modified "2023-10-15" @default.
• W4386763267 title "Atomic Layer Deposition of HfO₂ Films Using Tetrakis(1-(<i>N</i>,<i>N</i>-dimethylamino)-2-propoxy)hafnium [Hf(dmap)₄] for Advanced Gate Dielectrics Applications" @default.
• W4386763267 cites W103493881 @default.
• W4386763267 cites W1997094062 @default.
• W4386763267 cites W1997921153 @default.
• W4386763267 cites W2008036069 @default.
• W4386763267 cites W2014079303 @default.
• W4386763267 cites W2023353733 @default.
• W4386763267 cites W2034997794 @default.
• W4386763267 cites W2037863274 @default.
• W4386763267 cites W2041246757 @default.
• W4386763267 cites W2045807741 @default.
• W4386763267 cites W2053674573 @default.
• W4386763267 cites W2057742828 @default.
• W4386763267 cites W2058043629 @default.
• W4386763267 cites W2060477323 @default.
• W4386763267 cites W2061354524 @default.
• W4386763267 cites W2076972388 @default.
• W4386763267 cites W2077770884 @default.
• W4386763267 cites W2091739606 @default.
• W4386763267 cites W2114118400 @default.
• W4386763267 cites W2141185951 @default.
• W4386763267 cites W2889470051 @default.
• W4386763267 cites W2996284964 @default.
• W4386763267 cites W3001684375 @default.
• W4386763267 cites W3180965327 @default.
• W4386763267 cites W4285403655 @default.
• W4386763267 doi "https://doi.org/10.1021/acsanm.3c03319" @default.
• W4386763267 hasPublicationYear "2023" @default.
• W4386763267 type Work @default.
• W4386763267 citedByCount "0" @default.
• W4386763267 crossrefType "journal-article" @default.
• W4386763267 hasAuthorship W4386763267A5003209931 @default.
• W4386763267 hasAuthorship W4386763267A5041930406 @default.
• W4386763267 hasAuthorship W4386763267A5086182020 @default.
• W4386763267 hasConcept C113196181 @default.
• W4386763267 hasConcept C121332964 @default.
• W4386763267 hasConcept C160434732 @default.
• W4386763267 hasConcept C161790260 @default.
• W4386763267 hasConcept C178790620 @default.
• W4386763267 hasConcept C179104552 @default.
• W4386763267 hasConcept C185592680 @default.
• W4386763267 hasConcept C2778839380 @default.
• W4386763267 hasConcept C2779227376 @default.
• W4386763267 hasConcept C2781083472 @default.
• W4386763267 hasConcept C39519442 @default.
• W4386763267 hasConcept C534791751 @default.
• W4386763267 hasConcept C544153396 @default.
• W4386763267 hasConcept C546638069 @default.
• W4386763267 hasConcept C57410435 @default.
• W4386763267 hasConcept C69544855 @default.
• W4386763267 hasConcept C97355855 @default.
• W4386763267 hasConceptScore W4386763267C113196181 @default.
• W4386763267 hasConceptScore W4386763267C121332964 @default.
• W4386763267 hasConceptScore W4386763267C160434732 @default.
• W4386763267 hasConceptScore W4386763267C161790260 @default.
• W4386763267 hasConceptScore W4386763267C178790620 @default.
• W4386763267 hasConceptScore W4386763267C179104552 @default.
• W4386763267 hasConceptScore W4386763267C185592680 @default.
• W4386763267 hasConceptScore W4386763267C2778839380 @default.
• W4386763267 hasConceptScore W4386763267C2779227376 @default.
• W4386763267 hasConceptScore W4386763267C2781083472 @default.
• W4386763267 hasConceptScore W4386763267C39519442 @default.
• W4386763267 hasConceptScore W4386763267C534791751 @default.
• W4386763267 hasConceptScore W4386763267C544153396 @default.
• W4386763267 hasConceptScore W4386763267C546638069 @default.
• W4386763267 hasConceptScore W4386763267C57410435 @default.
• W4386763267 hasConceptScore W4386763267C69544855 @default.
• W4386763267 hasConceptScore W4386763267C97355855 @default.
• W4386763267 hasFunder F4320323533 @default.
• W4386763267 hasFunder F4320334764 @default.
• W4386763267 hasLocation W43867632671 @default.
• W4386763267 hasOpenAccess W4386763267 @default.
• W4386763267 hasPrimaryLocation W43867632671 @default.
• W4386763267 hasRelatedWork W1974411933 @default.
• W4386763267 hasRelatedWork W1986272256 @default.
• W4386763267 hasRelatedWork W2066153809 @default.
• W4386763267 hasRelatedWork W2089389958 @default.
• W4386763267 hasRelatedWork W2095115726 @default.
• W4386763267 hasRelatedWork W2119332465 @default.
• W4386763267 hasRelatedWork W2738338129 @default.
• W4386763267 hasRelatedWork W2898485154 @default.
• W4386763267 hasRelatedWork W2949598167 @default.
• W4386763267 hasRelatedWork W2952239507 @default.
• W4386763267 isParatext "false" @default.
• W4386763267 isRetracted "false" @default.
• W4386763267 workType "article" @default.