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- W4386780309 abstract "The near-field thermal radiation has broad application prospects in micro-nano-scale thermal management technology. In this paper, we report the Dirac semimetal-assisted (AlCuFe quasicrystal) near-field radiative thermal rectifier (DSTR) and thermostat (DST), respectively. The DSTR is made of a Dirac semimetal-covered vanadium dioxide (VO 2 ) plate and silicon dioxide (SiO 2 ) plate separated by a vacuum gap. The left and right sides of DST are consisted of the SiO 2 covered with Dirac semimetal, and the intermediate plate is the VO 2 . The strong coupling of the surface electromagnetic modes between the Dirac semimetal, SiO 2 , and insulating VO 2 leads to enhance near-field radiative transfer. In the DSTR, the net radiative heat flux of VO 2 in the insulating state is much larger than that in metallic state. When the vacuum gap distance d =100 nm, Fermi level E F =0.20 eV, and film thickness t =12 nm, the global rectification factor of DSTR is 3.5, which is 50% higher than that of structure without Dirac semimetal. In the DST, the equilibrium temperature of the VO 2 can be controlled accurately to achieve the switching between the metallic and insulating state of VO 2 . When the vacuum gap distance d =60 nm, intermediate plate thickness δ =30 nm, and film thickness t =2 nm, with the modulation of Fermi level between 0.05-0.15 eV, the equilibrium temperature of VO 2 can be controlled between 325-371 K. In brief, when the crystalline state of VO 2 changes between the insulating and metallic state with temperature, the active regulation of near-field thermal radiation can be realized in both two-body and three-body parallel plate structure. This work will pave a way to further improve performance of near-field radiative thermal management and modulation." @default.
- W4386780309 created "2023-09-16" @default.
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- W4386780309 date "2023-09-29" @default.
- W4386780309 modified "2023-10-06" @default.
- W4386780309 title "Dirac semimetal-assisted near-field radiative thermal rectifier and thermal transistor based on phase transition of vanadium dioxide" @default.
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- W4386780309 doi "https://doi.org/10.1364/oe.496766" @default.
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