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- W4386782875 abstract "On‐chip integration of two‐dimensional (2D) materials holds immense potential for novel optoelectronic devices across diverse photonic platforms. In particular, indium selenide (InSe) is a very promising 2D material due to its ultra‐high carrier mobility and outstanding photoresponsivity. Herein, a high‐speed photodetector based on a multilayer 90 nm thick InSe integrated on a silicon nitride (SiN) waveguide is reported. The device exhibits a remarkable low dark current density of ≈40 nA μm −2 , a photoresponsivity of 0.38 A W −1 , and an external quantum efficiency of ≈48.4%. Tested under ambient conditions at near‐infrared 976 nm wavelength, it exhibits an absorption coefficient of 0.11 dB μm −1 . Additionally, the photodetector demonstrates a 3‐dB radiofrequency bandwidth of 85 MHz and an open‐eye diagram at data transmission of 1 Gbit s −1 . Based on these exceptional optoelectronic advantages, integrated multilayer InSe enables the realization of active photonic devices for a range of applications, such as short‐reach optical interconnects, LiDAR imaging, and biosensing." @default.
- W4386782875 created "2023-09-16" @default.
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- W4386782875 date "2023-09-15" @default.
- W4386782875 modified "2023-09-26" @default.
- W4386782875 title "High‐Speed Waveguide‐Integrated InSe Photodetector on SiN Photonics for Near‐Infrared Applications" @default.
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- W4386782875 doi "https://doi.org/10.1002/adpr.202300162" @default.
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