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• W4386825512 abstract "This article introduces the first BiCMOS SiGe technology-based packaged noise source (NS) operating in the <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$G$</tex-math> </inline-formula> -band (140–220 GHz). An amplified p-n junction diode has been packaged and biased in avalanche mode to generate excess noise ratios (ENRs <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{mathrm{av}})$</tex-math> </inline-formula> of approximately 25 dB between 140 and 170 GHz at package output for an unbiased low state and a high state corresponding to a 20-mA cathode current. The two-stage amplifier is a cascode cell composed of two BiCMOS 55-nm NPN very high speed (NPNVHS) transistors with an emitter length and a width of 5.56 and 0.2 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu$</tex-math> </inline-formula> m, respectively. An optimal biasing results in a 8.2-mA current consumption for one cascode stage and an overall available power gain ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$G_{mathrm{av}})$</tex-math> </inline-formula> better than 12 dB between 140 and 180 GHz. This supports operation in a low state, where the diode is unbiased and the amplifier is biased, which constitutes a scheme that easily validates the minimum detectable signal (MDS) condition while exhibiting a 14-dB ENR <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{mathrm{av}}$</tex-math> </inline-formula> level in the beginning of <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$G$</tex-math> </inline-formula> -band compared to this polarized low state. This NS shows a monitorable <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$P_{mathrm{COLD}}$</tex-math> </inline-formula> and is adaptable to several noise receivers. In addition, the ENR <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{mathrm{av}}$</tex-math> </inline-formula> level flatness is better than 3 dB over the entire frequency range, and the impedance matching, better than <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$-$</tex-math> </inline-formula> 7.5 dB at package output, is not dependent on the NS bias condition. Noise figure (NF) extraction of a WR05-connectorized III–V amplifier MPA04-1 from Virginia Diodes, Inc. (VDI) was performed and compared to the ELVA ISSN-05 commercial NS measurement, showing low discrepancy. The same study was performed on-wafer for an NPNVHS transistor on BiCMOS 55-nm technology, showing a maximum discrepancy of 0.8 dB between the two measured NFs. The NF measurement accuracy of the MPA04-1 amplifier was assessed up to 220 GHz, by varying the chosen high state while keeping the low state completely unbiased. A maximum 0.5-dB variation over 12 obtained NF values is observed up to 200 GHz." @default.
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• W4386825512 date "2023-01-01" @default.
• W4386825512 modified "2023-10-14" @default.
• W4386825512 title "A $G$-Band Packaged Amplified Noise Source Using SiGe BiCMOS 55-nm Technology" @default.
• W4386825512 doi "https://doi.org/10.1109/tmtt.2023.3311476" @default.
• W4386825512 hasPublicationYear "2023" @default.
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