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- W4386853922 abstract "There is increasing interest in the alpha polytype of Ga 2 O 3 because of its even larger bandgap than the more studied beta polytype, but in common with the latter, there is no viable p-type doping technology. One option is to use p-type oxides to realize heterojunctions and NiO is one of the candidate oxides. The band alignment of sputtered NiO on α-Ga 2 O 3 remains type II, staggered gap for annealing temperatures up to 600 °C, showing that this is a viable approach for hole injection in power electronic devices based on the alpha polytype of Ga 2 O 3 . The magnitude of both the conduction and valence band offsets increases with temperature up to 500 °C, but then is stable to 600 °C. For the as-deposited NiO/α-Ga 2 O 3 heterojunction, ΔE V = −2.8 and ΔE C = 1.6 eV, while after 600 °C annealing the corresponding values are ΔE V = −4.4 and ΔE C = 3.02 eV. These values are 1−2 eV larger than for the NiO/β-Ga 2 O 3 heterojunction. Figure 1" @default.
- W4386853922 created "2023-09-20" @default.
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- W4386853922 date "2023-08-28" @default.
- W4386853922 modified "2023-09-27" @default.
- W4386853922 title "Determination of Type II Band Alignment of NiO/α-Ga<sub>2</sub>O<sub>3</sub> For Annealing Temperatures Up To 600°C" @default.
- W4386853922 doi "https://doi.org/10.1149/ma2023-01321831mtgabs" @default.
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