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- W4386853923 abstract "In this study, a reaction-limited chemical wet etching process of NiO by an HNO3-based solution, with a complete selectivity over β-Ga 2 O 3 was investigated. The threshold ion energies for inductively coupled plasmas (ICP) dry etching of NiO in BCl 3 discharges, its selectivity to β-Ga 2 O 3, and the cleaning effect for chlorine-based residues remaining on the surface after plasma exposure was also examined. One of the major drawbacks of β-Ga 2 O 3 device design is the lack of p-type dopants. An alternative approach is to use a p-type oxide, NiO, to form heterojunctions with n-type Ga 2 O 3 . Therefore, a selective wet and dry etching process development is in demand for the optimized pattern transfer process. A solution of 1 HNO 3 : 4 H 2 O exhibited measurable etch rates for NiO above 40°C and wet etching activation energy of 172.9 kJ.mol -1 (41.3 kCal.mol -1 , 1.8 eV/atom), which is firmly in the reaction-limited regime. The selectivity over β-Ga 2 O 3 was infinite for temperatures up to 55 °C. The strong negative enthalpy for producing the etch product Ga(OH) 4 suggests that HNO 3 -based wet etching of NiO occurs via the formation and dissolution of hydroxides. The BCl 3 /Ar ICP etching produced maximum etch rates up to 300 Å.min -1 for NiO and 800 Å.min -1 for β-Ga 2 O 3 under moderate plasma power conditions. The selectivity for NiO: Ga 2 O 3 was < 1 under all conditions. The ion energy threshold for the initiation of etching NiO was between 35-60 eV, depending on the plasma power conditions. And its etching mechanism was ion-driven, as determined by the linear dependence between etch rate and the square root of ion energy incident on the surface. By sharp contrast, the etching of Ga 2 O 3 had a stronger chemical component without a well-defined ion energy threshold. After being exposed to BCl 3 plasmas, both NiO and Ga 2 O 3 surfaces show chlorine residues, which can both be removed by the standard 1NH 4 OH: 10H 2 O or 1HCl: 10H 2 O solution used for native oxide removal. In addition, according to the location of the Cl 2p 3/2 peak in the XPS analysis on the surface, the chlorine particles were ionically bonded. Figure 1" @default.
- W4386853923 created "2023-09-20" @default.
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- W4386853923 date "2023-08-28" @default.
- W4386853923 modified "2023-09-27" @default.
- W4386853923 title "Selective Wet and Dry Etching of NiO over β-Ga<sub>2</sub>O<sub>3</sub>" @default.
- W4386853923 doi "https://doi.org/10.1149/ma2023-01321832mtgabs" @default.
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