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- W4386858770 abstract "Electrical characterization of small technology nodes is essential in failure analysis and yield improvement. The currently available nodes exhibit contacts having diameters of less than 30 nm. We investigated the influence of the contact resistance between the samples’ contacts and the probe tips placed on contacts of various technology nodes (14 nm, 10 nm, 7 nm and 5 nm) by using a 6-point measurement and applied a simple correction to the transistor curves based on these measurements. The analysis shows that contact resistances may be dominant even if all employed components are clean and that using five or six tips to characterize a transistor provides more accurate results with minimal additional effort." @default.
- W4386858770 created "2023-09-20" @default.
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- W4386858770 date "2023-07-24" @default.
- W4386858770 modified "2023-09-27" @default.
- W4386858770 title "Improved electrical characterization of transistors manufactured in small technology nodes" @default.
- W4386858770 cites W6297299 @default.
- W4386858770 doi "https://doi.org/10.1109/ipfa58228.2023.10249156" @default.
- W4386858770 hasPublicationYear "2023" @default.
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