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- W4386858930 abstract "Dark-line defect is a common crystal defect in vertical cavity surface emitting lasers (VCSEL) and other semiconductor diodes to cause optical power degradation after long time operation. This work studied the dark-line defect formation and activation mechanism in high-power VCSEL arrays after high-temperature operation life (HTOL) stress up to 2000 hours under high current and short-pulse operation condition. Electrical-optical light-current-voltage testing is used to monitor the power degradation after HTOL stress and slight output power drop is found. Three electrical failure analysis techniques, including reverse IV curves, near-field emission profile images and electron beam induced current (EBIC) images are adopted to study the defect location and reveal that dark-line defect formation and reaching quantum well regions. Subsequently, planar-view transmission electron microscopy (PV-TEM) lamella are prepared to clearly show dark-line defect loops formation at the oxide aperture periphery. Cross-sectional TEM images across a dark-line defect loop find that the dark-line defect origins from the oxide tip. Oxide tip region is a weak location due to the induced interstitial defects between oxide and epitaxy semiconductor layer interface during oxidation process. Nevertheless, the oxide aperture tip has experienced high current density during HTOL overstress condition, and the locally high current and temperature provided sufficient activation energies for the interstitials atom to move around and form dislocation loops. It is consistent with the dark-line defect network location observed from PVTEM and proves that high current density and optical power is responsible for the dark-line defect growth from oxide aperture tip and propagation into active region." @default.
- W4386858930 created "2023-09-20" @default.
- W4386858930 creator A5032815379 @default.
- W4386858930 creator A5045808309 @default.
- W4386858930 creator A5057645358 @default.
- W4386858930 creator A5092901685 @default.
- W4386858930 date "2023-07-24" @default.
- W4386858930 modified "2023-09-27" @default.
- W4386858930 title "Study on Dark-line Defect Formation in High-Power Oxide-Confined VCSEL Arrays" @default.
- W4386858930 cites W1963606260 @default.
- W4386858930 cites W1984143815 @default.
- W4386858930 cites W1998664278 @default.
- W4386858930 cites W2024240832 @default.
- W4386858930 cites W2134350725 @default.
- W4386858930 cites W2151764360 @default.
- W4386858930 cites W3014126409 @default.
- W4386858930 cites W3156405909 @default.
- W4386858930 doi "https://doi.org/10.1109/ipfa58228.2023.10249154" @default.
- W4386858930 hasPublicationYear "2023" @default.
- W4386858930 type Work @default.
- W4386858930 citedByCount "0" @default.
- W4386858930 crossrefType "proceedings-article" @default.
- W4386858930 hasAuthorship W4386858930A5032815379 @default.
- W4386858930 hasAuthorship W4386858930A5045808309 @default.
- W4386858930 hasAuthorship W4386858930A5057645358 @default.
- W4386858930 hasAuthorship W4386858930A5092901685 @default.
- W4386858930 hasConcept C106246969 @default.
- W4386858930 hasConcept C120665830 @default.
- W4386858930 hasConcept C121332964 @default.
- W4386858930 hasConcept C121477167 @default.
- W4386858930 hasConcept C146088050 @default.
- W4386858930 hasConcept C147080431 @default.
- W4386858930 hasConcept C159122135 @default.
- W4386858930 hasConcept C159985019 @default.
- W4386858930 hasConcept C171250308 @default.
- W4386858930 hasConcept C180651308 @default.
- W4386858930 hasConcept C192562407 @default.
- W4386858930 hasConcept C23125352 @default.
- W4386858930 hasConcept C2779162123 @default.
- W4386858930 hasConcept C49040817 @default.
- W4386858930 hasConcept C520434653 @default.
- W4386858930 hasConcept C53120450 @default.
- W4386858930 hasConcept C544956773 @default.
- W4386858930 hasConcept C78434282 @default.
- W4386858930 hasConceptScore W4386858930C106246969 @default.
- W4386858930 hasConceptScore W4386858930C120665830 @default.
- W4386858930 hasConceptScore W4386858930C121332964 @default.
- W4386858930 hasConceptScore W4386858930C121477167 @default.
- W4386858930 hasConceptScore W4386858930C146088050 @default.
- W4386858930 hasConceptScore W4386858930C147080431 @default.
- W4386858930 hasConceptScore W4386858930C159122135 @default.
- W4386858930 hasConceptScore W4386858930C159985019 @default.
- W4386858930 hasConceptScore W4386858930C171250308 @default.
- W4386858930 hasConceptScore W4386858930C180651308 @default.
- W4386858930 hasConceptScore W4386858930C192562407 @default.
- W4386858930 hasConceptScore W4386858930C23125352 @default.
- W4386858930 hasConceptScore W4386858930C2779162123 @default.
- W4386858930 hasConceptScore W4386858930C49040817 @default.
- W4386858930 hasConceptScore W4386858930C520434653 @default.
- W4386858930 hasConceptScore W4386858930C53120450 @default.
- W4386858930 hasConceptScore W4386858930C544956773 @default.
- W4386858930 hasConceptScore W4386858930C78434282 @default.
- W4386858930 hasLocation W43868589301 @default.
- W4386858930 hasOpenAccess W4386858930 @default.
- W4386858930 hasPrimaryLocation W43868589301 @default.
- W4386858930 hasRelatedWork W1974946518 @default.
- W4386858930 hasRelatedWork W1986847053 @default.
- W4386858930 hasRelatedWork W2014895674 @default.
- W4386858930 hasRelatedWork W2041223447 @default.
- W4386858930 hasRelatedWork W2053347479 @default.
- W4386858930 hasRelatedWork W2059905991 @default.
- W4386858930 hasRelatedWork W2069439234 @default.
- W4386858930 hasRelatedWork W2475681188 @default.
- W4386858930 hasRelatedWork W1589445462 @default.
- W4386858930 hasRelatedWork W1969932262 @default.
- W4386858930 isParatext "false" @default.
- W4386858930 isRetracted "false" @default.
- W4386858930 workType "article" @default.