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• W4386859657 endingPage "114" @default.
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• W4386859657 abstract "Abstract In a memristor or a so-called memristive device, the resistance state depends on the previous charge flow through the device. The new resistance state is stored and classifies a memristor as a non-volatile memory device. This likewise unique and simple feature qualifies memristive devices as attractive compartments with regard to the development of a universal memory and beyond von Neumann computing architectures, including in-memory computing and neuromorphic circuits. In this chapter, we present studies on two kinds of bi-layer metal oxide memristive devices with the layer sequences Nb/NbO $$_{textrm{z}}$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mtext>z</mml:mtext> </mml:msub> </mml:math> /Al $$_2$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mn>2</mml:mn> </mml:msub> </mml:math> O $$_3$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mn>3</mml:mn> </mml:msub> </mml:math> /Nb $$_{textrm{x}}$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mtext>x</mml:mtext> </mml:msub> </mml:math> O $$_{textrm{y}}$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mtext>y</mml:mtext> </mml:msub> </mml:math> /Au and TiN/TiO $$_textrm{x}$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mtext>x</mml:mtext> </mml:msub> </mml:math> /HfO $$_textrm{x}$$ <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML> <mml:msub> <mml:mrow /> <mml:mtext>x</mml:mtext> </mml:msub> </mml:math> /Au, either prepared by reactive DC-magnetron sputtering, etching and optical lithography. It is shown that the memristive properties of such devices can be engineered, which enables tailoring of the memristive devices for particular applications." @default.
• W4386859657 created "2023-09-20" @default.
• W4386859657 creator A5033062024 @default.
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• W4386859657 date "2023-09-20" @default.
• W4386859657 modified "2023-10-02" @default.
• W4386859657 title "Redox-Based Bi-Layer Metal Oxide Memristive Devices" @default.
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