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- W4386860122 abstract "Abstract Memristors are promising candidates for new memory technologies and are capable to mimic synapses in artificial neural networks. The switching in memristive devices occurs typically in few nanometer thin dielectric layers. The direct observation of the switching mechanism is crucial for better comprehension and improvements of memristors. Therefore, in situ experiments are conducted in a transmission electron microscope (TEM). However, sample preparation processes and electron beam irradiation can lead to a chemical and structural modification of the active layers. Moreover, devices may show significant device-to-device variability due to the details of processing parameters. Thus, it is essential to characterize the identical device electrically before microstructural analysis." @default.
- W4386860122 created "2023-09-20" @default.
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- W4386860122 date "2023-09-20" @default.
- W4386860122 modified "2023-09-27" @default.
- W4386860122 title "Critical Discussion of Ex situ and In situ TEM Measurements on Memristive Devices" @default.
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- W4386860122 doi "https://doi.org/10.1007/978-3-031-36705-2_5" @default.
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