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- W4386869693 abstract "This article analyses the introduction of airgaps in the interconnect network of silicon-on-insulator (SOI)-CMOS-based RF switches to significantly reduce the OFF-state capacitance <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{C}_{biosc{off}}$</tex-math> </inline-formula> without degrading the ON-state resistance <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{R}_{biosc{on}}$</tex-math> </inline-formula> . Based on the 130-nm node of an existing RF-SOI-CMOS technology, an accurate <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{C}_{biosc{off}}$</tex-math> </inline-formula> evaluation is performed by calculating the respective contributions of interconnects and the intrinsic transistor separately. The impact of the relative airgap volume is simulated and results in an ultimate <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{C}_{biosc{off}}$</tex-math> </inline-formula> reduction of 24.6% when the intermetal dielectric is completely replaced by air. It is shown that most of the reduction in <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{C}_{biosc{off}}$</tex-math> </inline-formula> is achieved by introducing airgap at the first metal level. The airgap approach is verified experimentally by partially eliminating the interconnect dielectric of RF switches in postprocess etching steps. A measured <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$textit{C}_{biosc{off}}$</tex-math> </inline-formula> improvement of 21.7 (7.2%) and 18.3 fF/mm (6.3%) is demonstrated for 0.14-and 0.16- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu$</tex-math> </inline-formula> m gate length transistors, for which the airgap volume is only partial." @default.
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- W4386869693 date "2023-01-01" @default.
- W4386869693 modified "2023-10-16" @default.
- W4386869693 title "Analysis of Airgaps for OFF-State Capacitance Reduction in SOI-CMOS RF Switches" @default.
- W4386869693 doi "https://doi.org/10.1109/ted.2023.3311415" @default.
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