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- W4386960964 abstract "With the improvement of new technology in electronic devices and the development of nanomaterials, higher better device performance and more efficient functions of Field-Effect Transistors (FETs) are expected, these require the use of material that has well-performed physical and chemical properties. Carbon nanotubes are a viable alternative, and their popularity is increasing rapidly in recent years. With the decrease in the size of the transistor, the increase in current, and the strength of magnetic and electrical fields, many problems for the creation of destructive and leaky currents occurred. This article mainly aimed to summarize three main FET types and included new carbon nanotube FETs by introducing their basic working mechanism and discussing the difficulties such as the short channel effect, gate-induced drain leakage and contact resistance. It also tries to give a few possible solutions to them which include adding a Lightly Doped Drain or using chemical doping, as well as predict how the potential of FETs in the future at the end." @default.
- W4386960964 created "2023-09-23" @default.
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- W4386960964 date "2023-09-25" @default.
- W4386960964 modified "2023-10-03" @default.
- W4386960964 title "Based on the comparisons with various types of transistors to predict the trend of nanotube FETs in the future" @default.
- W4386960964 doi "https://doi.org/10.54254/2755-2721/11/20230265" @default.
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