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- W4387007099 abstract "Abstract In search of novel conducting oxide heterointerfaces, a conducting interface Ca0.5TaO3/SrTiO3 was reported with non-stoichiometry growth, but the supportive mechanism behind the origin of conductivity is not clear. Herein, firstly we studied the stoichiometry of the grown films with RBS and XPS techniques, which were deposited on TiO2-terminated SrTiO3 substrate by ablating the CaTa2O6 target with varying laser energy density which is a conceivable parameter to vary stoichiometry. The transport property (R(T) measurement) of grown interfaces was investigated by depositing films at various oxygen partial pressures and analysing the transport property of grown film at SrO-termination-SrTiO3 surface to rule out that the oxygen vacancies is not main mechanism. Experimental results revealed that films were non-stoichiometric at selected energy densities. The interface with a TiO2-terminated SrTiO3 substrate is conducting and requires a minimum number of oxygen vacancies is required, whereas the interface with a SrO-terminated surface is highly insulating that was grown at 10-4 mbar oxygen partial pressure. Thus, oxygen vacancies play important in conducting oxide TiO2-terminated STO-based interfaces. Grown heterostructures have negative charge carriers at interfaces for non-stoichiometry films with a sheet carrier density of ≈ 1013 cm-2." @default.
- W4387007099 created "2023-09-26" @default.
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- W4387007099 date "2023-09-25" @default.
- W4387007099 modified "2023-09-26" @default.
- W4387007099 title "Effect of growth parameters on conducting Ca<sub>x</sub>Ta<sub>y</sub>O<sub>3-δ</sub>/SrTiO<sub>3</sub> interface" @default.
- W4387007099 doi "https://doi.org/10.1088/1361-6463/acfcc5" @default.
- W4387007099 hasPublicationYear "2023" @default.
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