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• W4387019740 abstract "The non-planar growth of UV-A laser diode heterostructures composed of AlGaN layers with high Al-mole-fractions and thicknesses exceeding the critical layer thickness was performed on patterned c-plane GaN (0001) substrates with stripe-shaped mesa structures. This approach suppressed the surface cracking at the top of the mesas via an anisotropic relaxation of the in-plane strain along the direction normal to the mesa stripes. Stimulated emission and laser operation at room temperature with emission in the UV-A range under pulsed current injection were demonstrated for laser diodes fabricated on the mesas." @default.
• W4387019740 created "2023-09-26" @default.
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• W4387019740 date "2023-09-25" @default.
• W4387019740 modified "2023-09-26" @default.
• W4387019740 title "Non-planar growth of high Al-mole-fraction AlGaN heterostructures on patterned GaN substrates for ultraviolet laser diodes" @default.
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• W4387019740 doi "https://doi.org/10.1063/5.0159684" @default.
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