FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W4387037035> ?p ?o ?g. }

• W4387037035 endingPage "015702" @default.
• W4387037035 startingPage "015702" @default.
• W4387037035 abstract "The potential of neuromorphic computing in synaptic simulation has led to a renewed interest in memristor. However, the demand for multilevel resistive switching with high reliability and low power consumption is still a great resistance in this application. In this work, the electronic synaptic plasticity and simulated bipolar switching behavior of Pt/Al2O3(2 nm)/HfO2(10 nm)/Al2O3(2 nm)/Ti tri-layer memristor is investigated. The effect of Al2O3layer embedded at the top electrode and the bottom electrode on the resistive performance of the memristor was studied. It is found that both of them can effectively improve the reliability of the device (104cycles), the resistive window (>103), the tunable synaptic linearity and reduce of the operating voltage. RRAM with Al2O3embedded at the top electrode have higher uniformity and LTP linearity, while those with Al2O3embedded at the bottom electrode significantly reduce the operating current (∼10μA) and improve LTD linearity. Electron transport mechanisms were compared between single-layer HfO2and tri-layer Al2O3/HfO2/Al2O3samples under DC scanning. The results showed that the thin Al2O3layer at the top electrode led to Fowler Northeim tunneling in the low-resistance state, while the thin Al2O3layer at the bottom electrode led to Schottky emission in the high-resistance state. The Al2O3/HfO2/Al2O3memristors were successfully used to achieve synaptic properties, including enhancement, inhibition, and spike time-dependent plasticity, demonstrating an important role in high-performance neuromorphic computing applications." @default.
• W4387037035 created "2023-09-27" @default.
• W4387037035 creator A5052931863 @default.
• W4387037035 creator A5071985886 @default.
• W4387037035 creator A5073310578 @default.
• W4387037035 date "2023-10-13" @default.
• W4387037035 modified "2023-10-15" @default.
• W4387037035 title "Research on Electronic Synaptic Simulation of HfO2-based Memristor by Embedding Al2O3" @default.
• W4387037035 cites W1678748398 @default.
• W4387037035 cites W1964266735 @default.
• W4387037035 cites W1982136110 @default.
• W4387037035 cites W2010030075 @default.
• W4387037035 cites W2080779735 @default.
• W4387037035 cites W2095053155 @default.
• W4387037035 cites W2115868848 @default.
• W4387037035 cites W2120557145 @default.
• W4387037035 cites W2128240512 @default.
• W4387037035 cites W2142785265 @default.
• W4387037035 cites W2227747847 @default.
• W4387037035 cites W2264218706 @default.
• W4387037035 cites W2314767241 @default.
• W4387037035 cites W2409727973 @default.
• W4387037035 cites W2462963692 @default.
• W4387037035 cites W2497687198 @default.
• W4387037035 cites W2518084657 @default.
• W4387037035 cites W2662553141 @default.
• W4387037035 cites W2738860157 @default.
• W4387037035 cites W2767248126 @default.
• W4387037035 cites W2769585078 @default.
• W4387037035 cites W2775001084 @default.
• W4387037035 cites W2907392033 @default.
• W4387037035 cites W2952659242 @default.
• W4387037035 cites W2970401101 @default.
• W4387037035 cites W2973952117 @default.
• W4387037035 cites W2981160796 @default.
• W4387037035 cites W2991262307 @default.
• W4387037035 cites W2999474720 @default.
• W4387037035 cites W3006063589 @default.
• W4387037035 cites W3006423901 @default.
• W4387037035 cites W3008911676 @default.
• W4387037035 cites W3034487977 @default.
• W4387037035 cites W3083367311 @default.
• W4387037035 cites W3094521649 @default.
• W4387037035 cites W3135686783 @default.
• W4387037035 cites W3171052753 @default.
• W4387037035 cites W3196539000 @default.
• W4387037035 cites W3196860406 @default.
• W4387037035 cites W4200540397 @default.
• W4387037035 cites W4220810576 @default.
• W4387037035 cites W4285798166 @default.
• W4387037035 cites W4296001819 @default.
• W4387037035 cites W4308734500 @default.
• W4387037035 doi "https://doi.org/10.1088/1361-6528/acfd31" @default.
• W4387037035 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/37751722" @default.
• W4387037035 hasPublicationYear "2023" @default.
• W4387037035 type Work @default.
• W4387037035 citedByCount "0" @default.
• W4387037035 crossrefType "journal-article" @default.
• W4387037035 hasAuthorship W4387037035A5052931863 @default.
• W4387037035 hasAuthorship W4387037035A5071985886 @default.
• W4387037035 hasAuthorship W4387037035A5073310578 @default.
• W4387037035 hasConcept C119857082 @default.
• W4387037035 hasConcept C127413603 @default.
• W4387037035 hasConcept C147789679 @default.
• W4387037035 hasConcept C150072547 @default.
• W4387037035 hasConcept C151927369 @default.
• W4387037035 hasConcept C171250308 @default.
• W4387037035 hasConcept C17525397 @default.
• W4387037035 hasConcept C182019814 @default.
• W4387037035 hasConcept C185592680 @default.
• W4387037035 hasConcept C192562407 @default.
• W4387037035 hasConcept C24326235 @default.
• W4387037035 hasConcept C41008148 @default.
• W4387037035 hasConcept C49040817 @default.
• W4387037035 hasConcept C50644808 @default.
• W4387037035 hasConcept C77170095 @default.
• W4387037035 hasConceptScore W4387037035C119857082 @default.
• W4387037035 hasConceptScore W4387037035C127413603 @default.
• W4387037035 hasConceptScore W4387037035C147789679 @default.
• W4387037035 hasConceptScore W4387037035C150072547 @default.
• W4387037035 hasConceptScore W4387037035C151927369 @default.
• W4387037035 hasConceptScore W4387037035C171250308 @default.
• W4387037035 hasConceptScore W4387037035C17525397 @default.
• W4387037035 hasConceptScore W4387037035C182019814 @default.
• W4387037035 hasConceptScore W4387037035C185592680 @default.
• W4387037035 hasConceptScore W4387037035C192562407 @default.
• W4387037035 hasConceptScore W4387037035C24326235 @default.
• W4387037035 hasConceptScore W4387037035C41008148 @default.
• W4387037035 hasConceptScore W4387037035C49040817 @default.
• W4387037035 hasConceptScore W4387037035C50644808 @default.
• W4387037035 hasConceptScore W4387037035C77170095 @default.
• W4387037035 hasFunder F4320321001 @default.
• W4387037035 hasIssue "1" @default.
• W4387037035 hasLocation W43870370351 @default.
• W4387037035 hasLocation W43870370352 @default.
• W4387037035 hasOpenAccess W4387037035 @default.
• W4387037035 hasPrimaryLocation W43870370351 @default.
• W4387037035 hasRelatedWork W1940420793 @default.

• next