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• W4387079069 endingPage "172347" @default.
• W4387079069 startingPage "172347" @default.
• W4387079069 abstract "Atomic layered material is a particular candidate for adjusting the energy band structure of semiconductor materials through strain engineering, which is an effective and convenient method to improve photoelectric performance. Herein, we demonstrated the ReS2-based photodetectors covered with high-k Al2O3 and Si3N4 stress layers. The stress layers photodetectors show excellent thermal stability due to the surface passivation effect of the dielectric layers and high optoelectronic properties due to the doping effect formed upon laser excitation. In addition, the presence of the stress layer causes tensile strain in the ReS2 film, which alters its energy band structure properties. Through the first-principles calculations, it can be found that the band gap and the electron effective mass of ReS2 have decreased with the increase of the tensile stress, which further increases the carrier mobility. In addition, photodetectors with Al2O3 and Si3N4 stress layers were prepared separately, and the significant enhancement of the photoelectric performance of ReS2 devices by deposited stress layers was demonstrated." @default.
• W4387079069 created "2023-09-28" @default.
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• W4387079069 date "2023-12-01" @default.
• W4387079069 modified "2023-10-11" @default.
• W4387079069 title "Effect of stress modulation of Al2O3 and Si3N4 nanolayers on the photoelectric properties of ReS2 photodetectors based on sapphire substrates" @default.
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• W4387079069 doi "https://doi.org/10.1016/j.jallcom.2023.172347" @default.
• W4387079069 hasPublicationYear "2023" @default.
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