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- W4387158052 abstract "The crucial role of nanocrystalline morphology in stabilizing the ferroelectric orthorhombic (o)-phase in doped-hafnia films is achieved via chemical solution deposition (CSD) by intentionally retaining carbonaceous impurities to inhibit grain growth. However, in the present study, large-grained (>100 nm) La-doped HfO2 (HLO) films are grown directly on silicon by adopting engineered water-diluted precursors with a minimum carbonaceous load and excellent shelf life. The o-phase stabilization is accomplished through a well-distributed La dopant, which generates uniformly populated oxygen vacancies, eliminating the need for oxygen-scavenging electrodes. These oxygen-deficient HLOs show a maximum remnant polarization of 37.6 μC/cm2 (2Pr) without wake-up and withstand large fields (>6.2 MV/cm). Furthermore, CSD-HLO in series with Al2O3 improves switching of MOSFETs (with an amorphous oxide channel) based on the negative capacitance effect. Thus, uniformly distributed oxygen vacancies serve as a standalone factor in stabilizing the o-phase, enabling efficient wake-up-free ferroelectricity without the need for nanostructuring, capping stresses, or oxygen-reactive electrodes." @default.
- W4387158052 created "2023-09-30" @default.
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- W4387158052 date "2023-09-29" @default.
- W4387158052 modified "2023-10-16" @default.
- W4387158052 title "An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO<sub>2</sub> Ferroelectrics for Negative Capacitance Field Effect Transistors" @default.
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- W4387158052 doi "https://doi.org/10.1021/acsnano.3c04983" @default.
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