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- W4387162912 abstract "Reliability and yield are major concerns for memory devices. The random variability sources have a significant impact on the reliability of the memory window (MW) in ferroelectric FETs. In this work, through a comprehensive study, we analysed the impact of the non-uniform dielectric phase and metal grains on the coercive field of Metal-Ferro-Metal capacitor and on the performance of FeFETs. We found 1) Metal grains randomization (MGR) causes polarization non-uniformity throughout the volume of the ferroelectric layer; 2) Smaller metal thickness (T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>metal</inf> ) causes larger polarization non-uniformity due to work function discreteness. It leads to higher device variability and results in memory window closure; 3) Larger the metal grain size (MGS) higher will be the device variation; 4) The combination of higher the DE phase along with the higher DE grain size and larger the MGS with T <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>metal</inf> causes worst-case reliability issues." @default.
- W4387162912 created "2023-09-30" @default.
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- W4387162912 date "2023-07-23" @default.
- W4387162912 modified "2023-09-30" @default.
- W4387162912 title "Impact of Non-Uniform Ferroelectric Dielectric Phase and Metal Grains on the Performance of MFM Capacitor and Ferroelectric FETs" @default.
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- W4387162912 doi "https://doi.org/10.1109/isaf53668.2023.10265412" @default.
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