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• W4387231805 endingPage "115133" @default.
• W4387231805 startingPage "115133" @default.
• W4387231805 abstract "We analyze the impact of scaling on the off-state, three-terminal, lateral breakdown of 100 V E-mode p-GaN/AlGaN/GaN HEMTs for low-voltage/low on-resistance applications. To this aim, we compared device structures with different SiO2 dielectric thickness below the field plate, and varying gate-to-drain spacing and field-plate dimensions. The results indicate that: a) the breakdown voltage depends on the geometry and on the thickness of the dielectric under the field plate (tSiO2); b) scaling the dielectric thickness increases the sensitivity of breakdown voltage to the gate-drain distance, while preserving device robustness (breakdown voltages above 150 V for a 100 V technology); c) for the devices with thinner dielectric, breakdown voltage scales linearly with gate drain distance, and with field plate length. A further analysis of the data reveals that the critical parameter in terms of reliability is the distance between the field-plate edge and the drain contact; d) scaling of the dielectric thickness does not enhance charge trapping phenomena. In summary, the results provide guidelines for scaling GaN HEMT device dimensions, while preserving reliability and immunity to charge trapping phenomena." @default.
• W4387231805 created "2023-10-02" @default.
• W4387231805 creator A5002653396 @default.
• W4387231805 creator A5008126297 @default.
• W4387231805 creator A5013541996 @default.
• W4387231805 creator A5019757644 @default.
• W4387231805 creator A5027748782 @default.
• W4387231805 creator A5030245776 @default.
• W4387231805 creator A5041018780 @default.
• W4387231805 creator A5046174818 @default.
• W4387231805 creator A5064109540 @default.
• W4387231805 creator A5077631766 @default.
• W4387231805 date "2023-10-01" @default.
• W4387231805 modified "2023-10-07" @default.
• W4387231805 title "Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness" @default.
• W4387231805 cites W1879538535 @default.
• W4387231805 cites W1963946809 @default.
• W4387231805 cites W2063781729 @default.
• W4387231805 cites W2122801773 @default.
• W4387231805 cites W2133089477 @default.
• W4387231805 cites W2143979385 @default.
• W4387231805 cites W2158437612 @default.
• W4387231805 cites W2766877743 @default.
• W4387231805 cites W2969306269 @default.
• W4387231805 cites W2990154169 @default.
• W4387231805 cites W3014532895 @default.
• W4387231805 cites W3015726929 @default.
• W4387231805 cites W321215454 @default.
• W4387231805 cites W4200011672 @default.
• W4387231805 cites W4297200644 @default.
• W4387231805 doi "https://doi.org/10.1016/j.microrel.2023.115133" @default.
• W4387231805 hasPublicationYear "2023" @default.
• W4387231805 type Work @default.
• W4387231805 citedByCount "0" @default.
• W4387231805 crossrefType "journal-article" @default.
• W4387231805 hasAuthorship W4387231805A5002653396 @default.
• W4387231805 hasAuthorship W4387231805A5008126297 @default.
• W4387231805 hasAuthorship W4387231805A5013541996 @default.
• W4387231805 hasAuthorship W4387231805A5019757644 @default.
• W4387231805 hasAuthorship W4387231805A5027748782 @default.
• W4387231805 hasAuthorship W4387231805A5030245776 @default.
• W4387231805 hasAuthorship W4387231805A5041018780 @default.
• W4387231805 hasAuthorship W4387231805A5046174818 @default.
• W4387231805 hasAuthorship W4387231805A5064109540 @default.
• W4387231805 hasAuthorship W4387231805A5077631766 @default.
• W4387231805 hasBestOaLocation W43872318051 @default.
• W4387231805 hasConcept C104317684 @default.
• W4387231805 hasConcept C119321828 @default.
• W4387231805 hasConcept C119599485 @default.
• W4387231805 hasConcept C121332964 @default.
• W4387231805 hasConcept C127413603 @default.
• W4387231805 hasConcept C128624480 @default.
• W4387231805 hasConcept C133386390 @default.
• W4387231805 hasConcept C162057924 @default.
• W4387231805 hasConcept C165801399 @default.
• W4387231805 hasConcept C166972891 @default.
• W4387231805 hasConcept C172385210 @default.
• W4387231805 hasConcept C185592680 @default.
• W4387231805 hasConcept C192562407 @default.
• W4387231805 hasConcept C195370968 @default.
• W4387231805 hasConcept C2524010 @default.
• W4387231805 hasConcept C33923547 @default.
• W4387231805 hasConcept C49040817 @default.
• W4387231805 hasConcept C55493867 @default.
• W4387231805 hasConcept C60799052 @default.
• W4387231805 hasConcept C62520636 @default.
• W4387231805 hasConcept C63479239 @default.
• W4387231805 hasConcept C70401718 @default.
• W4387231805 hasConcept C99844830 @default.
• W4387231805 hasConceptScore W4387231805C104317684 @default.
• W4387231805 hasConceptScore W4387231805C119321828 @default.
• W4387231805 hasConceptScore W4387231805C119599485 @default.
• W4387231805 hasConceptScore W4387231805C121332964 @default.
• W4387231805 hasConceptScore W4387231805C127413603 @default.
• W4387231805 hasConceptScore W4387231805C128624480 @default.
• W4387231805 hasConceptScore W4387231805C133386390 @default.
• W4387231805 hasConceptScore W4387231805C162057924 @default.
• W4387231805 hasConceptScore W4387231805C165801399 @default.
• W4387231805 hasConceptScore W4387231805C166972891 @default.
• W4387231805 hasConceptScore W4387231805C172385210 @default.
• W4387231805 hasConceptScore W4387231805C185592680 @default.
• W4387231805 hasConceptScore W4387231805C192562407 @default.
• W4387231805 hasConceptScore W4387231805C195370968 @default.
• W4387231805 hasConceptScore W4387231805C2524010 @default.
• W4387231805 hasConceptScore W4387231805C33923547 @default.
• W4387231805 hasConceptScore W4387231805C49040817 @default.
• W4387231805 hasConceptScore W4387231805C55493867 @default.
• W4387231805 hasConceptScore W4387231805C60799052 @default.
• W4387231805 hasConceptScore W4387231805C62520636 @default.
• W4387231805 hasConceptScore W4387231805C63479239 @default.
• W4387231805 hasConceptScore W4387231805C70401718 @default.
• W4387231805 hasConceptScore W4387231805C99844830 @default.
• W4387231805 hasLocation W43872318051 @default.
• W4387231805 hasOpenAccess W4387231805 @default.
• W4387231805 hasPrimaryLocation W43872318051 @default.
• W4387231805 hasRelatedWork W1905863001 @default.
• W4387231805 hasRelatedWork W2103281872 @default.
• W4387231805 hasRelatedWork W2153961385 @default.

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