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• W4387232794 abstract "In this study, carbon-doped semi-insulating N-polar GaN on a sapphire substrate was prepared using a propane precursor. Controlling the deposition rate of N-polar GaN helped to improve the carbon incorporation efficiency, providing a semi-insulating behavior. The material quality and surface roughness of the N-polar GaN improved with modified deposition conditions. C-doping using 1.8 mmol/min of propane gave an abrupt doping profile near the GaN/sapphire interface, which was useful for obtaining semi-insulating N-polar GaN grown on sapphire. This study shows that further development of the deposition process will allow for improved material quality and produce a state-of-the-art N-polar semi-insulating GaN layer." @default.
• W4387232794 created "2023-10-02" @default.
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• W4387232794 date "2023-10-01" @default.
• W4387232794 modified "2023-10-16" @default.
• W4387232794 title "First Demonstration of Extrinsic C-Doped Semi-Insulating N-Polar GaN Using Propane Precursor Grown on Miscut Sapphire Substrate by MOCVD" @default.
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• W4387232794 doi "https://doi.org/10.3390/cryst13101457" @default.
• W4387232794 hasPublicationYear "2023" @default.
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