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• W4387251490 abstract "Both from a scalability and integration perspective, CMOS-based qubits hold great potential for quantum computing applications. However, current fabrication processes must be adapted to fit qubit requirements, implying a need for controlled process monitoring to compare technological splits as well as to guarantee future process quality. The switch to isotopically-enriched <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>28</sup> Si as a channel material is one such adaptation that requires deeper study. Here, we fabricate identical devices with <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>28</sup> Si and natural Si and present a comparison of their variable-temperature transport characteristics using the Hall effect and split C-V. Once validated, we use the same 300mm process flow to fabricate <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>28</sup> Si quantum dots which, despite the addition of a second gate level, display state-of-the-art charge noise at 400mK." @default.
• W4387251490 created "2023-10-03" @default.
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• W4387251490 date "2023-09-11" @default.
• W4387251490 modified "2023-10-06" @default.
• W4387251490 title "Transport characterization of CMOS-based devices fabricated with isotopically-enriched ²⁸Si for spin qubit applications" @default.
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• W4387251490 doi "https://doi.org/10.1109/essderc59256.2023.10268523" @default.
• W4387251490 hasPublicationYear "2023" @default.
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