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- W4387331462 abstract "Heterointerfaces and quantum wells were realized in III–V nanowires monolithically grown from a silicon seed inside a silicon oxide template on a silicon-on-insulator wafer. InP, InGaAs, InAs, and GaAs were grown by metal-organic chemical vapor deposition. The yield of nanowires with a well-defined single-facet {1 1 1}B growth front was assessed using scanning electron microscopy, reaching 92.55%. Scanning transmission electron microscopy and energy-dispersive X-ray spectroscopy analysis revealed good composition control and the formation of sharp single-faceted quantum wells throughout the sample. The robustness of the process was further demonstrated by a forced merger of individual nanowires into one large crystal. In this sample, the quantum wells were as well defined as those in the single-seed nanowires. At the same time, we did not observe the formation of any dislocations at the merge location." @default.
- W4387331462 created "2023-10-05" @default.
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- W4387331462 date "2023-10-04" @default.
- W4387331462 modified "2023-10-14" @default.
- W4387331462 title "In-Plane III–V Nanowires on Si(1 1 0) with Quantum Wells by Selective Epitaxy in Templates" @default.
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- W4387331462 doi "https://doi.org/10.1021/acs.cgd.3c00806" @default.
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