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• W4387385621 abstract "A novel 4H-silicon carbide power heterojunction tunneling transistor (4H-SiC power HETT) structure is proposed and demonstrated by the calibrated process and characteristic simulation, featuring a low specific ON-resistance ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>R</i> <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{biosc{on},text{sp}}$</tex-math> </inline-formula> ) of 1.56 m <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Omega cdot text{cm}^{text{2}}$</tex-math> </inline-formula> , 1460 V breakdown voltage (BV), and a low forward voltage drop ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{text{F}}$</tex-math> </inline-formula> ) of 1.4 V reaching the level of the junction barrier Schottky barrier diode (JBS) diode. The N <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$^{+}$</tex-math> </inline-formula> type polycrystalline silicon (Poly-Si) is utilized to form the heterojunction with the 4H-SiC epi-layer. Owing to the unique cell structure of 4H-SiC power HETT, the cell pitch is reduced to 3 <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu $</tex-math> </inline-formula> m for significantly improving the tunneling current density. Moreover, the 0.3- <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$mu $</tex-math> </inline-formula> m shallow gate trench and the Al <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{text{2}}$</tex-math> </inline-formula> O <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{text{3}}$</tex-math> </inline-formula> high- <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>k</i> dielectric further enhance the gate-controlled heterojunction tunneling characteristic. The parasitic heterojunction body diode with a heterojunction barrier of 0.7 eV provides a <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>V</i> <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$_{text{F}}$</tex-math> </inline-formula> of 1.4 V and the unipolar freewheeling current without bipolar degradation issues. The P region sustains a high avalanche breakdown and effectively shields the electric field ( <italic xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>E</i> ) under the shallow gate trench and the heterojunction interface, leading to good gate reliability and low reverse leakage current. The simulation results show that the 4H-SiC power HETT has potential to approach the ideal performances of the SiC material and replace the conventional SiC power MOSFETs." @default.
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• W4387385621 date "2023-01-01" @default.
• W4387385621 modified "2023-10-16" @default.
• W4387385621 title "Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure" @default.
• W4387385621 doi "https://doi.org/10.1109/ted.2023.3317004" @default.
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