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- W4387398977 abstract "In this work, the elemental composition and the concentration distribution of silicon dopant over the thickness of the grown GaAs epitaxial layer in narrow grooves formed by etching in chlorpentafluoroethane plasma were studied." @default.
- W4387398977 created "2023-10-07" @default.
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- W4387398977 date "2023-10-18" @default.
- W4387398977 modified "2023-10-18" @default.
- W4387398977 title "SIMS ANALYSIS OF EPITAXIAL LAYERS OF GALLIUM ARSENIDE IN NARROW GROOVES OBTAINED BY ETCHING IN CHLORPENTAFLUOROETHANE PLASMA" @default.
- W4387398977 doi "https://doi.org/10.61527/appfe-2023.202-203" @default.
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