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- W4387445496 abstract "Abstract A polycrystalline-silicon (poly-Si) thin-film transistor with an independent dual-gate (IDG) structure and ultra-thin nanosheet channel (~ 4 nm) was fabricated to investigate the impacts of different dual-gate operation modes on device performance and reliability. Compared to the single top-gate (TG) operation mode, the double-gate (DG) operation mode exhibits superior threshold voltage (VTH), subthreshold swing, and saturation current in the device. In addition, the DG operation mode also shows better reliability behavior of positive gate bias stress (PGS) due to the enhanced control capability of the gate voltage on the channel potential. Under the single TG operation mode, the independent back-gate voltage (VBG) can effectively modulate the device's VTH to meet circuit design requirements. Using a fixed positive VBG can not only reduce the VTH of the device, but also decrease the damage caused by the PGS on the device due to the buried channel effect generated by the ultra-thin nanosheet channel, which increases the coupling capacitance thickness between the buried channel and the top-gate oxide layer. On the contrary, using a negative VBG will enhance the PGS degradation of TG. Consequently, the positive VBG is suggested to lower the VTH and improve the PGS of the device." @default.
- W4387445496 created "2023-10-10" @default.
- W4387445496 creator A5008532255 @default.
- W4387445496 creator A5009132116 @default.
- W4387445496 creator A5014936927 @default.
- W4387445496 creator A5028901853 @default.
- W4387445496 creator A5045772001 @default.
- W4387445496 creator A5052208885 @default.
- W4387445496 creator A5063540842 @default.
- W4387445496 creator A5073495781 @default.
- W4387445496 date "2023-10-09" @default.
- W4387445496 modified "2023-10-11" @default.
- W4387445496 title "Exploring Performance and Reliability Behavior of Nanosheet Channel Thin-Film Transistors under Independent Dual Gate Bias Operation" @default.
- W4387445496 doi "https://doi.org/10.1149/2162-8777/ad017b" @default.
- W4387445496 hasPublicationYear "2023" @default.
- W4387445496 type Work @default.
- W4387445496 citedByCount "0" @default.
- W4387445496 crossrefType "journal-article" @default.
- W4387445496 hasAuthorship W4387445496A5008532255 @default.
- W4387445496 hasAuthorship W4387445496A5009132116 @default.
- W4387445496 hasAuthorship W4387445496A5014936927 @default.
- W4387445496 hasAuthorship W4387445496A5028901853 @default.
- W4387445496 hasAuthorship W4387445496A5045772001 @default.
- W4387445496 hasAuthorship W4387445496A5052208885 @default.
- W4387445496 hasAuthorship W4387445496A5063540842 @default.
- W4387445496 hasAuthorship W4387445496A5073495781 @default.
- W4387445496 hasBestOaLocation W43874454961 @default.
- W4387445496 hasConcept C119599485 @default.
- W4387445496 hasConcept C121332964 @default.
- W4387445496 hasConcept C127413603 @default.
- W4387445496 hasConcept C163258240 @default.
- W4387445496 hasConcept C165801399 @default.
- W4387445496 hasConcept C171250308 @default.
- W4387445496 hasConcept C172385210 @default.
- W4387445496 hasConcept C192562407 @default.
- W4387445496 hasConcept C195370968 @default.
- W4387445496 hasConcept C2361726 @default.
- W4387445496 hasConcept C2779227376 @default.
- W4387445496 hasConcept C43214815 @default.
- W4387445496 hasConcept C49040817 @default.
- W4387445496 hasConcept C51967427 @default.
- W4387445496 hasConcept C62520636 @default.
- W4387445496 hasConcept C87359718 @default.
- W4387445496 hasConceptScore W4387445496C119599485 @default.
- W4387445496 hasConceptScore W4387445496C121332964 @default.
- W4387445496 hasConceptScore W4387445496C127413603 @default.
- W4387445496 hasConceptScore W4387445496C163258240 @default.
- W4387445496 hasConceptScore W4387445496C165801399 @default.
- W4387445496 hasConceptScore W4387445496C171250308 @default.
- W4387445496 hasConceptScore W4387445496C172385210 @default.
- W4387445496 hasConceptScore W4387445496C192562407 @default.
- W4387445496 hasConceptScore W4387445496C195370968 @default.
- W4387445496 hasConceptScore W4387445496C2361726 @default.
- W4387445496 hasConceptScore W4387445496C2779227376 @default.
- W4387445496 hasConceptScore W4387445496C43214815 @default.
- W4387445496 hasConceptScore W4387445496C49040817 @default.
- W4387445496 hasConceptScore W4387445496C51967427 @default.
- W4387445496 hasConceptScore W4387445496C62520636 @default.
- W4387445496 hasConceptScore W4387445496C87359718 @default.
- W4387445496 hasFunder F4320331164 @default.
- W4387445496 hasLocation W43874454961 @default.
- W4387445496 hasOpenAccess W4387445496 @default.
- W4387445496 hasPrimaryLocation W43874454961 @default.
- W4387445496 hasRelatedWork W1522438678 @default.
- W4387445496 hasRelatedWork W1580385727 @default.
- W4387445496 hasRelatedWork W1971979379 @default.
- W4387445496 hasRelatedWork W2037887846 @default.
- W4387445496 hasRelatedWork W2043741144 @default.
- W4387445496 hasRelatedWork W2052726452 @default.
- W4387445496 hasRelatedWork W2057023681 @default.
- W4387445496 hasRelatedWork W2312173377 @default.
- W4387445496 hasRelatedWork W2897698314 @default.
- W4387445496 hasRelatedWork W2978736898 @default.
- W4387445496 isParatext "false" @default.
- W4387445496 isRetracted "false" @default.
- W4387445496 workType "article" @default.