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- W4387451346 abstract "Abstract The gapped Dirac-like surface states of compensated magnetic topological insulator MnBi 2-x Sb x Te 4 (MBST) are a promising host for exotic quantum phenomena such as the quantum anomalous Hall effect and axion insulating state. However, it has become clear that atomic defects undermine the stabilization of such quantum phases as they lead to spatial variations in the surface state gap and doping levels. The large number of possible defect configurations in MBST make studying the influence of individual defects virtually impossible. Here, we present a statistical analysis of the nanoscale effect of defects in MBST with x =0.64, by scanning tunnelling microscopy/spectroscopy. We identify (Bi,Sb) Mn anti-site defects to be the main source of the observed doping fluctuations, leading towards the formation of nanoscale charge puddles and effectively closing the transport gap. Our findings will guide further optimization of this material system via defect engineering, to enable exploitation of its promising properties." @default.
- W4387451346 created "2023-10-10" @default.
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- W4387451346 date "2023-10-09" @default.
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- W4387451346 title "Anti-site defect-induced disorder in compensated topological magnet MnBi2-xSbxTe4" @default.
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- W4387451346 doi "https://doi.org/10.1038/s43246-023-00408-w" @default.
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