Matches in SemOpenAlex for { <https://semopenalex.org/work/W4387454080> ?p ?o ?g. }
- W4387454080 abstract "Ion irradiation is a versatile and convenient tool for modifying the optical, electrical, and catalytic properties of two-dimensional (2D) materials through controlled induction of impurities and defects. The behavior of 2D materials under ion irradiation is interesting, which needs to be explored in the contest of their optoelectronic applications. In the present work, we have reported the effect of H+-ion irradiation on layered α-MoO3 flakes by defect engineering. Initially, the α-MoO3 crystals were synthesized using the physical vapor deposition technique followed by mechanical exfoliation of an as-grown crystal to obtain α-MoO3 flakes of different thicknesses. Then, the exfoliated flakes were exposed to H+-ion/proton irradiation with a fluence of 1 × 1016 ions/cm2 using a 30 keV source. After irradiation, new photoluminescence (PL) emission peaks were observed at different positions in the range of ∼2.4–1.9 eV, which was found to be absent in pristine flakes. Raman studies revealed non-uniform oxygen vacancy distribution in H+-ion irradiated α-MoO3 flakes, which affected the PL peak positions. Additionally, first-principle calculations and Bader charge analysis were performed to identify the origin of the new PL peaks. Our findings indicate that oxygen vacancies positioning at different locations of the α-MoO3 lead to the emergence of new absorption peaks within the range of ∼2.2–1.25 eV, which is consistent with our experimental findings. The present study gives insight into exploring the use of ion-irradiated α-MoO3 in optoelectronics applications with tunable properties." @default.
- W4387454080 created "2023-10-10" @default.
- W4387454080 creator A5026080737 @default.
- W4387454080 creator A5036165684 @default.
- W4387454080 creator A5041368152 @default.
- W4387454080 creator A5043880432 @default.
- W4387454080 creator A5056292256 @default.
- W4387454080 creator A5062014455 @default.
- W4387454080 creator A5064323093 @default.
- W4387454080 creator A5080535366 @default.
- W4387454080 date "2023-10-09" @default.
- W4387454080 modified "2023-10-11" @default.
- W4387454080 title "Investigating the effect of H+-ion irradiation on layered α-MoO3 flakes by defect engineering" @default.
- W4387454080 cites W1587591691 @default.
- W4387454080 cites W1609434872 @default.
- W4387454080 cites W1964198831 @default.
- W4387454080 cites W1969716006 @default.
- W4387454080 cites W1986913279 @default.
- W4387454080 cites W2002169205 @default.
- W4387454080 cites W2007887701 @default.
- W4387454080 cites W2008639551 @default.
- W4387454080 cites W2020989942 @default.
- W4387454080 cites W2021569649 @default.
- W4387454080 cites W2048172565 @default.
- W4387454080 cites W2083205829 @default.
- W4387454080 cites W2083750847 @default.
- W4387454080 cites W2093283008 @default.
- W4387454080 cites W2111128148 @default.
- W4387454080 cites W2216572023 @default.
- W4387454080 cites W2314640854 @default.
- W4387454080 cites W2318713233 @default.
- W4387454080 cites W2810085759 @default.
- W4387454080 cites W2847473187 @default.
- W4387454080 cites W2886261066 @default.
- W4387454080 cites W2914362254 @default.
- W4387454080 cites W3011491353 @default.
- W4387454080 cites W3044922775 @default.
- W4387454080 cites W3101434126 @default.
- W4387454080 cites W3166666676 @default.
- W4387454080 cites W3177285402 @default.
- W4387454080 cites W3177985354 @default.
- W4387454080 cites W3180912214 @default.
- W4387454080 cites W3206556704 @default.
- W4387454080 cites W4240604186 @default.
- W4387454080 cites W4384347169 @default.
- W4387454080 doi "https://doi.org/10.1063/5.0166452" @default.
- W4387454080 hasPublicationYear "2023" @default.
- W4387454080 type Work @default.
- W4387454080 citedByCount "0" @default.
- W4387454080 crossrefType "journal-article" @default.
- W4387454080 hasAuthorship W4387454080A5026080737 @default.
- W4387454080 hasAuthorship W4387454080A5036165684 @default.
- W4387454080 hasAuthorship W4387454080A5041368152 @default.
- W4387454080 hasAuthorship W4387454080A5043880432 @default.
- W4387454080 hasAuthorship W4387454080A5056292256 @default.
- W4387454080 hasAuthorship W4387454080A5062014455 @default.
- W4387454080 hasAuthorship W4387454080A5064323093 @default.
- W4387454080 hasAuthorship W4387454080A5080535366 @default.
- W4387454080 hasBestOaLocation W43874540801 @default.
- W4387454080 hasConcept C111337013 @default.
- W4387454080 hasConcept C113196181 @default.
- W4387454080 hasConcept C120665830 @default.
- W4387454080 hasConcept C121332964 @default.
- W4387454080 hasConcept C129162502 @default.
- W4387454080 hasConcept C145148216 @default.
- W4387454080 hasConcept C171250308 @default.
- W4387454080 hasConcept C178790620 @default.
- W4387454080 hasConcept C185544564 @default.
- W4387454080 hasConcept C185592680 @default.
- W4387454080 hasConcept C192562407 @default.
- W4387454080 hasConcept C22078206 @default.
- W4387454080 hasConcept C30080830 @default.
- W4387454080 hasConcept C40003534 @default.
- W4387454080 hasConcept C43617362 @default.
- W4387454080 hasConcept C49040817 @default.
- W4387454080 hasConcept C71987851 @default.
- W4387454080 hasConcept C85080765 @default.
- W4387454080 hasConceptScore W4387454080C111337013 @default.
- W4387454080 hasConceptScore W4387454080C113196181 @default.
- W4387454080 hasConceptScore W4387454080C120665830 @default.
- W4387454080 hasConceptScore W4387454080C121332964 @default.
- W4387454080 hasConceptScore W4387454080C129162502 @default.
- W4387454080 hasConceptScore W4387454080C145148216 @default.
- W4387454080 hasConceptScore W4387454080C171250308 @default.
- W4387454080 hasConceptScore W4387454080C178790620 @default.
- W4387454080 hasConceptScore W4387454080C185544564 @default.
- W4387454080 hasConceptScore W4387454080C185592680 @default.
- W4387454080 hasConceptScore W4387454080C192562407 @default.
- W4387454080 hasConceptScore W4387454080C22078206 @default.
- W4387454080 hasConceptScore W4387454080C30080830 @default.
- W4387454080 hasConceptScore W4387454080C40003534 @default.
- W4387454080 hasConceptScore W4387454080C43617362 @default.
- W4387454080 hasConceptScore W4387454080C49040817 @default.
- W4387454080 hasConceptScore W4387454080C71987851 @default.
- W4387454080 hasConceptScore W4387454080C85080765 @default.
- W4387454080 hasIssue "15" @default.
- W4387454080 hasLocation W43874540801 @default.
- W4387454080 hasOpenAccess W4387454080 @default.
- W4387454080 hasPrimaryLocation W43874540801 @default.
- W4387454080 hasRelatedWork W1553583976 @default.