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- W4387469749 abstract "Pentacene-based organic field-effect transistor (OFET) memories hold great promise for diverse applications. However, their full potential has been hindered by the challenges of high programming/erasing voltages and low switching speeds. Herein, systematic investigations were conducted by introducing a pseudo 'P-N' junction structure to elucidate the underlying factors for these limitations. Through careful analysis of the anomalous electric transport properties of the pseudo 'P-N' junctions, the presence of positively charged defects at the interface of pentacene film, with a face density of 7.04 × 1011/cm2, is revealed to be responsible for the high barrier for hole trapping. Comprehensive control experiments were performed to eliminate the effect of the positively charged defect interlayer, resulting in the acquisition of normal PN rectifying characteristics that further confirmed our proposed model. These findings shed light on the fundamental issues affecting pentacene-based OFET memory devices, and may pave the way for optimizing device performance and enabling their practical applications in the future." @default.
- W4387469749 created "2023-10-10" @default.
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- W4387469749 date "2023-11-01" @default.
- W4387469749 modified "2023-10-11" @default.
- W4387469749 title "Overcoming challenges in pentacene-based organic field-effect transistor memories: Insights from Pseudo 'P-N' junction investigations" @default.
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- W4387469749 doi "https://doi.org/10.1016/j.surfin.2023.103492" @default.
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