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• W4387487788 abstract "Silicon carbide (SiC) power transistors have been steadily gaining popularity in power electronics applications as they have improved properties over silicon based devices, namely silicon MOSFETs and IGBTs. However, because of very high switching speed which results in lower losses, in general application their use is often a concern because of electromagnetic interference (EMI). In order to fully utilise the potential of SiC based devices, a careful design of power stage, commutation loop and gate drive is needed. Because of this reason, this paper presents a review of existing gate drive methods for performance improvement of SiC devices. A special emphasis is given to the gate drive concepts, as it is an important element for the further advancement of SiC-based converters. With improved switching, specifically active gate driving techniques a compromise between EMI and switching losses can be achieved." @default.
• W4387487788 created "2023-10-11" @default.
• W4387487788 creator A5011768151 @default.
• W4387487788 creator A5053773812 @default.
• W4387487788 date "2023-09-25" @default.
• W4387487788 modified "2023-10-16" @default.
• W4387487788 title "An Overview of Advanced Gate Driver Concepts for SiC Semiconductors" @default.
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• W4387487788 doi "https://doi.org/10.1109/edpe58625.2023.10274012" @default.
• W4387487788 hasPublicationYear "2023" @default.
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