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• W4387501965 endingPage "1474" @default.
• W4387501965 startingPage "1474" @default.
• W4387501965 abstract "Extensive research into two-dimensional transition metal dichalcogenides (2D-TMDCs) over the past decade has paved the way for the development of (opto)electronic devices with enhanced performance and novel capabilities. To realize devices based on 2D-TMDC layers, compatible and optimized technologies such as layer transfer and photolithography are required. Challenges arise due to the ultrathin, surface-only nature of 2D layers with weak van der Waals adhesion to their substrate. This might potentially compromise their integrity during transfer and photolithography processes, in which prolonged exposure at usually high temperature to reactive chemicals and strong solvents are conventionally used. In this paper, we show that employing a dry-transfer technique based on thermal release tape (TRT) as an alternative to wet processes based on KOH solution better preserves layer quality. In the succeeding device fabrication process, an optimized photolithography as a cost-effective and widely available method for device patterning is utilized. The introduced photolithography protocol presents a near-perfect yield and reproducibility. To validate our optimized techniques, we fabricated field-effect transistors (FETs) using 2D-MoS2 layers from metal–organic chemical vapor deposition (MOCVD), wet- and dry-transferred onto SiO2/Si substrates. Our findings mark a significant stride towards the efficient and industry-compatible utilization of 2D van der Waals materials in device fabrication." @default.
• W4387501965 created "2023-10-11" @default.
• W4387501965 creator A5001042513 @default.
• W4387501965 creator A5005228845 @default.
• W4387501965 creator A5021882245 @default.
• W4387501965 creator A5022414227 @default.
• W4387501965 creator A5025241645 @default.
• W4387501965 creator A5030565181 @default.
• W4387501965 creator A5042867835 @default.
• W4387501965 creator A5046505569 @default.
• W4387501965 date "2023-10-10" @default.
• W4387501965 modified "2023-10-12" @default.
• W4387501965 title "Optimization of Layer Transfer and Photolithography for Device Integration of 2D-TMDC" @default.
• W4387501965 cites W2029116464 @default.
• W4387501965 cites W2048610167 @default.
• W4387501965 cites W2066083252 @default.
• W4387501965 cites W2072312985 @default.
• W4387501965 cites W2102532345 @default.
• W4387501965 cites W2129553451 @default.
• W4387501965 cites W2171573561 @default.
• W4387501965 cites W2176009997 @default.
• W4387501965 cites W2264362205 @default.
• W4387501965 cites W2274101181 @default.
• W4387501965 cites W2284566726 @default.
• W4387501965 cites W2312640850 @default.
• W4387501965 cites W2335370736 @default.
• W4387501965 cites W2398161477 @default.
• W4387501965 cites W2554247934 @default.
• W4387501965 cites W2582220472 @default.
• W4387501965 cites W2601437710 @default.
• W4387501965 cites W2758035406 @default.
• W4387501965 cites W2885982012 @default.
• W4387501965 cites W2955249786 @default.
• W4387501965 cites W2969993266 @default.
• W4387501965 cites W2971295144 @default.
• W4387501965 cites W2972790875 @default.
• W4387501965 cites W2972929019 @default.
• W4387501965 cites W2995449665 @default.
• W4387501965 cites W3000062389 @default.
• W4387501965 cites W3015477671 @default.
• W4387501965 cites W3091827636 @default.
• W4387501965 cites W3107502859 @default.
• W4387501965 cites W3118610928 @default.
• W4387501965 cites W3140560743 @default.
• W4387501965 cites W3161524900 @default.
• W4387501965 cites W3164247363 @default.
• W4387501965 cites W3187411796 @default.
• W4387501965 cites W3198417805 @default.
• W4387501965 cites W4205161479 @default.
• W4387501965 cites W4220720590 @default.
• W4387501965 cites W4224434616 @default.
• W4387501965 cites W4281481644 @default.
• W4387501965 cites W4296360439 @default.
• W4387501965 cites W4310524695 @default.
• W4387501965 cites W4317890008 @default.
• W4387501965 cites W4320727104 @default.
• W4387501965 cites W4379185131 @default.
• W4387501965 doi "https://doi.org/10.3390/cryst13101474" @default.
• W4387501965 hasPublicationYear "2023" @default.
• W4387501965 type Work @default.
• W4387501965 citedByCount "0" @default.
• W4387501965 crossrefType "journal-article" @default.
• W4387501965 hasAuthorship W4387501965A5001042513 @default.
• W4387501965 hasAuthorship W4387501965A5005228845 @default.
• W4387501965 hasAuthorship W4387501965A5021882245 @default.
• W4387501965 hasAuthorship W4387501965A5022414227 @default.
• W4387501965 hasAuthorship W4387501965A5025241645 @default.
• W4387501965 hasAuthorship W4387501965A5030565181 @default.
• W4387501965 hasAuthorship W4387501965A5042867835 @default.
• W4387501965 hasAuthorship W4387501965A5046505569 @default.
• W4387501965 hasBestOaLocation W43875019651 @default.
• W4387501965 hasConcept C105487726 @default.
• W4387501965 hasConcept C110738630 @default.
• W4387501965 hasConcept C111368507 @default.
• W4387501965 hasConcept C126061179 @default.
• W4387501965 hasConcept C127313418 @default.
• W4387501965 hasConcept C136525101 @default.
• W4387501965 hasConcept C142724271 @default.
• W4387501965 hasConcept C171250308 @default.
• W4387501965 hasConcept C175665537 @default.
• W4387501965 hasConcept C178790620 @default.
• W4387501965 hasConcept C185592680 @default.
• W4387501965 hasConcept C192562407 @default.
• W4387501965 hasConcept C204787440 @default.
• W4387501965 hasConcept C2777289219 @default.
• W4387501965 hasConcept C2779227376 @default.
• W4387501965 hasConcept C32909587 @default.
• W4387501965 hasConcept C49040817 @default.
• W4387501965 hasConcept C57410435 @default.
• W4387501965 hasConcept C71924100 @default.
• W4387501965 hasConceptScore W4387501965C105487726 @default.
• W4387501965 hasConceptScore W4387501965C110738630 @default.
• W4387501965 hasConceptScore W4387501965C111368507 @default.
• W4387501965 hasConceptScore W4387501965C126061179 @default.
• W4387501965 hasConceptScore W4387501965C127313418 @default.
• W4387501965 hasConceptScore W4387501965C136525101 @default.
• W4387501965 hasConceptScore W4387501965C142724271 @default.
• W4387501965 hasConceptScore W4387501965C171250308 @default.

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