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- W4387650579 abstract "Next‐generation “Beyond 5G (B5G)/6G” wireless network systems have been researched and developed for meeting the rapid growth of mobile traffic. We report a high‐yield fabrication process of InP‐based transistors and tera‐hertz monolithic integrated circuits (THz‐ICs) with 300‐GHz operation, which is a candidate frequency for “Beyond 5G/6G” network systems. We mainly focus on a high‐yield and reproductive fabrication process of InP‐based high electron mobility transistors (HEMTs) while revisiting previous studies. We also describe the DC and RF characteristics of fabricated InP‐HEMTs from the viewpoint of integrating circuits. Then, we obtain high‐frequency performances of f t =280 GHz and f max =860 GHz in the bias conditions of V gs /V ds = 0.2 /1.1 V with good uniformity. Finally, we introduce InP‐based 300‐GHz‐band mixer and power amplifiers, to which a backside process is also applied for ensuring their stability and enhancing output power. This article is protected by copyright. All rights reserved." @default.
- W4387650579 created "2023-10-16" @default.
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- W4387650579 date "2023-10-15" @default.
- W4387650579 modified "2023-10-16" @default.
- W4387650579 title "Systematic Study and Review of InP‐based Tera‐Hertz‐ICs Fabrication Process Technology for Beyond 5G/6G Wireless Communication Networks" @default.
- W4387650579 doi "https://doi.org/10.1002/pssa.202300561" @default.
- W4387650579 hasPublicationYear "2023" @default.
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