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- W49903611 abstract "This chapter describes in situ observation during molecular beam epitaxy. Molecular beam epitaxy (MBE) is an advanced technique of crystal growth that combines the versatility of a simple operating principle for material synthesis with in situ characterization of the growing surface. Under ultra-high vacuum (UHV) conditions beams of atoms or molecules evaporated from sources of the corresponding material constituents are directed onto a heated substrate, where they react to form a crystalline layer. The precise control of beam fluxes and deposition conditions makes it possible to grow single crystal layers with atomic-scale precision and to fabricate sophisticated structures with well-defined surfaces and interfaces. From the very beginning, the development of MBE benefitted from the use of surface analysis probes with electrons that can easily be integrated in a UHV environment. Moreover, the well-prepared MnAs surface exposed after appropriate nucleation, quasi-two-dimensional growth, and annealing develops stoichiometry-dependent reconstructions. These findings demonstrate that approaches to in situ growth control that are developed for III–V compound semiconductors, or more generally for zincblende structure materials, are successfully applied to material classes that differ considerably in chemical bonding properties and structure." @default.
- W49903611 created "2016-06-24" @default.
- W49903611 creator A5006792914 @default.
- W49903611 date "2001-01-01" @default.
- W49903611 modified "2023-09-25" @default.
- W49903611 title "IN SITU OBSERVATION DURING MOLECULAR BEAM EPITAXY: IMPURITY INCORPORATION AND DISSIMILAR MATERIALS EPITAXIAL GROWTH ON GaAs(001)" @default.
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