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• W50852230 abstract "Uses of semiconductors as radiation pickups in dosimetric devices are described. In such pickups, either radioactive pulses are transformed into electric pulses (in a circuit using the energy of a local source), or the pickup itself becomes a source of electric energy under the action of particle or photon flux. The action principle of pickups of the former type is analogous to that of gasdischarge Geiger counters. Pickups of the latter type are semiconductor valve elements. The main requirements that the pickups should meet are: changes produced by radiation in the pickup should be reversible; the equilibrium state of the pickup after switch-on and switch-off of radiation should be established within a sufficiently short time; while sufficiently sensitive to radiation, the pickup should be insensitive to other external influences (temperature, pressure, magnetic and electric fields); a sufficiently simple relationship (linear dependence) between the value of measured radiation and changes in pickup sensitivity parameters is desirable; and in many cases it is desirable that the pickup should record the puises of the individual ionizing particles or photons. Among the materials that more or less satisfy these requirements, semiconductors rank first, both in the form of monocrystalline and polycrystalline specimens. Those examinedmore » most are Cu/sub 2/O, Se, CdS, CdSe, PbS, Ge, and Si. CdS and CdSe rank first as to sensitivity. However, they are highly inert in the x and gamma ranges (of the order of tens of minutes), and therefore cannot be used for recording radiation in these ranges. Another way of working out semiconductor pickups for ionizing radiation consists in using semiconductor contact systems with an n-p junction in the contact zone (valve elements). The greatest inconvenience of such elements in recording particles or photons of very high energies is the lengthy or even irreversible change of the n-p junction properties, due to coarse lattice damage. These damages are absent, however, in the case of particles with the energy h nu < 1 Mev. Another disadvantage of valve elements in the x and gamma ranges is their low efficiency, related to the high penetrating power of these rays. The efficiency can be raised by passing a particle or photon beam through a column of thin-layer series-connected valve elements. Some characteristics of such valve-element batteries are indicated. (OTS)« less" @default.
• W50852230 created "2016-06-24" @default.
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• W50852230 date "1960-01-01" @default.
• W50852230 modified "2023-09-27" @default.
• W50852230 title "SEMICONDUCTOR ELECTRONICS IN THE DOSIMETRY OF PENETRATING RADIATION" @default.
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