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- W51458823 abstract "Chromium Schottky barrier diodes (SBDs) were fabricated on epitaxially grown n-GaAs layers in an RF sputter system for different sputter times. The SBD properties were determined by current-voltage (I-V) and capacitance-voltage (C-V) measurements, while deep level transient spectroscopy (DLTS) was employed to study the sputter deposition induced defects. The results showed that the Schottky barrier height of the SBDs on n-GaAs decreased with increasing sputter time. The origin of this barrier height modification was ascribed to the sputter deposition induced surface and sub-surface disorder which introduces electrically active defects with defects levels in the forbidden bandgap. DLTS depth profiling showed that some of these deep level defects extended deep below the surface. It appeared that one of the sputter induced defects in n-GaAs was a defect-dopant (Si) complex." @default.
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- W51458823 date "1996-01-01" @default.
- W51458823 modified "2023-10-16" @default.
- W51458823 title "Electronic properties of defects introduced during sputter deposition of Cr Schottky contacts on GaAs" @default.
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- W51458823 doi "https://doi.org/10.1016/b978-0-444-82334-2.50170-2" @default.
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