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- W52402015 abstract "Si-based heterostructure technologies have been widely developed over the last quarter century to overcome the scaling limit of CMOS performance. Strained growth, modulation doping, and formation of quantum well structures developed on Si substrates are the typical examples, which achieved significant enhancement of carrier mobility and electroluminescence efficiency. What is the next jump? Advanced crystal growth of high-quality SiGe crystals on insulating films is expected to open up high-performance system-in-displays and three-dimensional stacked devices. New functions created by spin-injection from ferromagnetic electrodes into SiGe channels are other candidates to be used for this purpose. In line with this, the present chapter describes recent developments in miscellaneous crystal growth methods and materials essential for SiGe on insulator structures and SiGe spintronics." @default.
- W52402015 created "2016-06-24" @default.
- W52402015 creator A5056595282 @default.
- W52402015 date "2011-01-01" @default.
- W52402015 modified "2023-09-26" @default.
- W52402015 title "Miscellaneous methods and materials for silicon–germanium (SiGe) based heterostructures" @default.
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- W52402015 doi "https://doi.org/10.1533/9780857091420.2.190" @default.
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