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- W52718006 abstract "Considerable efforts have recently been directed to the research and development of thin polycrystallins film photovoltaic devices from direct gap semiconductors with the objective of producing low cost photovoltaic systems. The conversion efficiencies of thin film devices, in most cases, are considerably lower than those of corresponding single crystalline devices due to the grain boundary effects. Extensive investigations thus far have not developed effective techniques to eliminate the grain boundary effects. The objective of this program is to determine the feasibility of using laser recrystallization for the passivation and reduction of grain boundaries in thin semiconductor films. The recrystallization of thin films of cadmium telluride, gallium arsenide, indium phosphide, and zinc phosphide using a pulsed (5 kHz) Nd:YAG laser has been investigated by scanning a laser beam over the specimen surface with successive overlapping scan lines. At a fixed scan rate, the optimum energy density for the recrystallization of the compound semiconductor films was determined. Electron microprobe analysis and electrical characteristics of Schottky barriers indicated the decomposition of these films during recrystallization. The relative extent of decomposition is related to the dissociation pressure of the semiconductor at its melting point. For example, the dissociation pressure of gallium arsenide is considerablymore » lower than that of indium phosphide. The chemical and structural damages in recrystallized gallium arsenide films can be removed by annealing in an arsine atmosphere while those in recrystallized indium phosphide films cannot. Although the recrystallized films are not directly useful for device purposes, homoepitaxial films of compound semiconductors, such as cadium telluride, deposited on recrystallized films have produced photovoltaic devices with improved characteristics.« less" @default.
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- W52718006 date "1985-01-01" @default.
- W52718006 modified "2023-09-27" @default.
- W52718006 title "Laser recrystallization of compound semiconductor films. Final report" @default.
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