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• W53472451 startingPage "52" @default.
• W53472451 abstract "The characterization of nanosize silicon-on-insulator (SOI) materials and devices demands special attention. This chapter shows that conventional measurement techniques need to be replaced, or at least updated. The accurate interpretation of experimental results is based on new models, able to account for multiple interfaces and channels. Informative examples are selected from various structures including ultrathin SOI wafers, fully depleted metal-oxide-semiconductor field-effect transistor (MOSFETs), and multiple-gate and nanowire transistors." @default.
• W53472451 created "2016-06-24" @default.
• W53472451 creator A5002685370 @default.
• W53472451 date "2014-01-01" @default.
• W53472451 modified "2023-10-16" @default.
• W53472451 title "Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors" @default.
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• W53472451 doi "https://doi.org/10.1533/9780857099259.1.52" @default.
• W53472451 hasPublicationYear "2014" @default.
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