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• W54719005 endingPage "89" @default.
• W54719005 startingPage "67" @default.
• W54719005 abstract "The stacking of crystal semiconductor thin films alternated with dielectric layers continuously arouses a sustained interest for its utility in three-dimensional (3D) integration of metal-oxide-semiconductor field-effect transistor (MOSFET). However, the growth of crystalline silicon without resorting to epitaxial growth from a crystal seed still constitutes an unresolved challenge. Although many different techniques ranging from solid-phase crystallization to thin-film bonding constitutes possible solutions with their respective advantages and weaknesses, little attention has been paid so far to the adaptation of a technique widely used for producing semiconductor nanowires, namely, the vapor–liquid–solid (VLS) catalytic growth. The basic idea developed in this chapter is to control VLS growth for synthesizing local silicon-on-insulator (SOI) layers at reduced thermal budget. Confined VLS growth is therefore proposed to produce single crystalline silicon (c-Si) film over an amorphous oxide layer, without crystalline seeding. It is demonstrated that VLS growth in the spatial confinement of a cavity produces nanometer-thick c-Si ribbons over a micron area scale with a well controlled localization. The nature of grown silicon layers is characterized by SEM (Scanning Electron Microscopy), EBSD (Electron Backscattered Diffraction) and STEM (Scanning Transmission Electron Microscopy) to analyze its crystallinity and to check the impact of the confining cavity walls on the purity of grown silicon. Beyond the in-depth structural analysis of VLS grown nanoribbons, simple back-gated MOSFET structures have been fabricated and electrically characterized to extract transport properties. The obtained hole mobility of 53 cm2 s−1 V−1 constitutes an excellent compromise for a processing temperature less or equal to 500°C." @default.
• W54719005 created "2016-06-24" @default.
• W54719005 creator A5000691620 @default.
• W54719005 creator A5007921823 @default.
• W54719005 creator A5044875650 @default.
• W54719005 creator A5046584048 @default.
• W54719005 creator A5048063495 @default.
• W54719005 creator A5069704592 @default.
• W54719005 creator A5083257667 @default.
• W54719005 date "2011-01-01" @default.
• W54719005 modified "2023-10-14" @default.
• W54719005 title "Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers" @default.
• W54719005 cites W1578931024 @default.
• W54719005 cites W1974259510 @default.
• W54719005 cites W1975567627 @default.
• W54719005 cites W1976894262 @default.
• W54719005 cites W1980012297 @default.
• W54719005 cites W1981053820 @default.
• W54719005 cites W1987657886 @default.
• W54719005 cites W1988218564 @default.
• W54719005 cites W1995174375 @default.
• W54719005 cites W2000830133 @default.
• W54719005 cites W2001579200 @default.
• W54719005 cites W2004146770 @default.
• W54719005 cites W2008816062 @default.
• W54719005 cites W2010548301 @default.
• W54719005 cites W2020254197 @default.
• W54719005 cites W2020330572 @default.
• W54719005 cites W2021590551 @default.
• W54719005 cites W2023579904 @default.
• W54719005 cites W2024885650 @default.
• W54719005 cites W2025352236 @default.
• W54719005 cites W2026934616 @default.
• W54719005 cites W2029070382 @default.
• W54719005 cites W2037993047 @default.
• W54719005 cites W2041677396 @default.
• W54719005 cites W2042885998 @default.
• W54719005 cites W2043499039 @default.
• W54719005 cites W2044417559 @default.
• W54719005 cites W2051909620 @default.
• W54719005 cites W2053006767 @default.
• W54719005 cites W2053818373 @default.
• W54719005 cites W2057284134 @default.
• W54719005 cites W2060725276 @default.
• W54719005 cites W2061163525 @default.
• W54719005 cites W2063829941 @default.
• W54719005 cites W2065485945 @default.
• W54719005 cites W2071747949 @default.
• W54719005 cites W2072572646 @default.
• W54719005 cites W2088134779 @default.
• W54719005 cites W2101432661 @default.
• W54719005 cites W2107535414 @default.
• W54719005 cites W2109422258 @default.
• W54719005 cites W2110880769 @default.
• W54719005 cites W2112690512 @default.
• W54719005 cites W2115641829 @default.
• W54719005 cites W2118284227 @default.
• W54719005 cites W2119951441 @default.
• W54719005 cites W2122511800 @default.
• W54719005 cites W2131427072 @default.
• W54719005 cites W2134823153 @default.
• W54719005 cites W2134980254 @default.
• W54719005 cites W2136982177 @default.
• W54719005 cites W2139140061 @default.
• W54719005 cites W2145216296 @default.
• W54719005 cites W2146657281 @default.
• W54719005 cites W2149910953 @default.
• W54719005 cites W2150471110 @default.
• W54719005 cites W2151997546 @default.
• W54719005 cites W2157950330 @default.
• W54719005 cites W2162948662 @default.
• W54719005 cites W2164634616 @default.
• W54719005 cites W2168604999 @default.
• W54719005 cites W2168813471 @default.
• W54719005 cites W2346046415 @default.
• W54719005 cites W4376453222 @default.
• W54719005 doi "https://doi.org/10.1007/978-3-642-15868-1_4" @default.
• W54719005 hasPublicationYear "2011" @default.
• W54719005 type Work @default.
• W54719005 sameAs 54719005 @default.
• W54719005 citedByCount "0" @default.
• W54719005 crossrefType "book-chapter" @default.
• W54719005 hasAuthorship W54719005A5000691620 @default.
• W54719005 hasAuthorship W54719005A5007921823 @default.
• W54719005 hasAuthorship W54719005A5044875650 @default.
• W54719005 hasAuthorship W54719005A5046584048 @default.
• W54719005 hasAuthorship W54719005A5048063495 @default.
• W54719005 hasAuthorship W54719005A5069704592 @default.
• W54719005 hasAuthorship W54719005A5083257667 @default.
• W54719005 hasConcept C108225325 @default.
• W54719005 hasConcept C110738630 @default.
• W54719005 hasConcept C133465062 @default.
• W54719005 hasConcept C171250308 @default.
• W54719005 hasConcept C192562407 @default.
• W54719005 hasConcept C2776390347 @default.
• W54719005 hasConcept C2779227376 @default.
• W54719005 hasConcept C2779667780 @default.
• W54719005 hasConcept C49040817 @default.

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