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- W5493150 abstract "Chemical mechanical polishing(CMP) process is essential technology to be applied to manufacturing the dielectric layer and metal line in semiconductor devices. It has been known that overpolishing in CMP depends on pattern selectivity as a function of density and pitch, and use of fixed abrasive pad(FAP) is one method which can improve the pattern selectivity. Thus, dishing & erosion defects can be reduced. This paper introduces the manufacturing technique of FAP using hydrophilic polymers with swelling characteristic in water and explains the self-conditioning phenomenon. When applied to tungsten blanket wafers, the FAP resulted in appropriate performance in point of uniformity, material selectivity and roughness. Especially, reduced dishing and erosion was observed in CMP of tungsten pattern wafer with the proposed FAP." @default.
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- W5493150 date "2005-04-01" @default.
- W5493150 modified "2023-09-27" @default.
- W5493150 title "Fixed Abrasive Pad with Self-conditioning in CMP Process" @default.
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- W5493150 doi "https://doi.org/10.4313/jkem.2005.18.4.321" @default.
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