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- W55209593 abstract "In the work formation of SiO2SnOxCuOy thin sol-gel films was studied. Investigation of their physical and chemical and electrophysical properties were carried out. It was shown, that stabilization of processes in solutions on the basis of TEOS and tin chloride (IV), occurs in 12 days after mixing of all precursor components. It was established that with increase of Cu(NO3)2 concentration in a solution, the surface root-mean-square roughness (Sq) of the films formed from them also increases, thus for the samples formed from solutions with high ratio of TEOS/SnCl4. Gas sensitive characteristics also were studied. It is defined that the sensor on the base of SiO2SnOxCuOy films shows the selective sensitivity to NO2 in a range of working temperatures 100-200 0С." @default.
- W55209593 created "2016-06-24" @default.
- W55209593 creator A5015793174 @default.
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- W55209593 date "2011-01-01" @default.
- W55209593 modified "2023-09-28" @default.
- W55209593 title "ИССЛЕДОВАНИЕ ПРОЦЕССА ПОЛУЧЕНИЯ И СВОЙСТВ НАНОРАЗМЕРНОГО МАТЕРИАЛА СОСТАВА SiO2SnOXCuOY, ДЛЯ СЕНСОРА ГАЗА" @default.
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