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- W567199158 abstract "Nanowire growth on heteroepitaxial GaP/Si(111) by metalorganic vapor phase epitaxy requires the [-1-1-1] face, i.e., GaP(111) material with B-type polarity. Low-energy electron diffraction (LEED) allows us to identify the polarity of GaP grown on Si(111), since (2×2) and (1×1) surface reconstructions are associated with GaP(111)A and GaP(111)B, respectively. In dependence on the pre-growth treatment of the Si(111) substrates, we were able to control the polarity of the GaP buffers. GaP films grown on the H-terminated Si(111) surface exhibited A-type polarity, while GaP grown on Si surfaces terminated with arsenic exhibited a (1×1) LEED pattern, indicating B-type polarity. We obtained vertical GaAs nanowire growth on heteroepitaxial GaP with (1×1) surface reconstruction only, in agreement with growth experiments on homoepitaxially grown GaP(111)." @default.
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- W567199158 date "2015-06-08" @default.
- W567199158 modified "2023-09-30" @default.
- W567199158 title "Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth" @default.
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- W567199158 doi "https://doi.org/10.1063/1.4922275" @default.
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