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• W575086725 abstract "Defects in Ultra-Shallow Junctions, M. E. Law, R. Camillo-Castillo, L. Robertson, and K. S. Jones Hydrogen-Related Defects in Silicon, Germanium, and Silicon-Germanium Alloys, A.R. Peaker, V.P. Markevich, and L. Dobaczewski Defects in Strained-Si MOSFETs, Y. Sun and S. E. Thompson The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface Roughness, M.V. Fischetti and S. Jin Electrical Characterization of Defects in Gate Dielectrics, D. K. Schroder Dominating Defects in the MOS System: Pb and E0 Centers, P. M. Lenahan Oxide Traps, Border Traps, and Interface Traps in SiO2, D. M. Fleetwood, S. T. Pantelides, and R. D. Schrimpf From 3D Imaging of Atoms to Macroscopic Device Properties, S. J. Pennycook, M. F. Chisholm, K. van Benthem, A. G. Marinopoulos, and S. T. Pantelides Defect Energy Levels in HfO2 and Related High-K Gate Oxides, J. Robertson, K. Xiong, and K. Tse Spectroscopic Studies of Electrically Active Defects in High-K Gate Dielectrics, G. Lucovsky Defects in CMOS Gate Dielectrics, E. Garfunkel, J. Gavartin, and G. Bersuker Negative Bias Temperature Instabilities in High-k Gate Dielectrics, M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, and M. M. Heyns Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen, L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides Toward Engineering Modeling of Negative Bias Temperature Instability, T. Grasser, W. Goes, and B. Kaczer Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides, J. S. Suehle Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics, J. Sune and E. Y. Wu Defects in Thin and Ultrathin Silicon Dioxides, G. Cellere, S. Gerardin, and A. Paccagnella Structural Defects in SiO2-Si Caused by Ion Bombardment, A. D. Touboul, A. Carvalho, M. Marinoni, F. Saigne, J. Bonnet, and J. Gasiot Impact of Radiation-Induced Defects on Bipolar Device Operation, R. D. Schrimpf, D. M. Fleetwood, R. L. Pease, L. Tsetseris, and S. T. Pantelides Silicon Dioxide-Silicon Carbide Interfaces: Current Status and Recent Advances, S. Dhar, S. T. Pantelides, J. R. Williams, and L. C. Feldman Defects in SiC, E. Janzen, A. Gali, A. Henry, I. G. Ivanov, B. Magnusson, and N. T. Son Defects in Gallium Arsenide, J. C. Bourgoin and H. J. von Bardeleben Appendix: Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices" @default.
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• W575086725 date "2008-11-19" @default.
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• W575086725 title "Defects in Microelectronic Materials and Devices" @default.
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• W575086725 doi "https://doi.org/10.1201/9781420043778" @default.
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