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- W576095655 abstract "Part 6 Measurements of transport properties of modulation doped heterostructures: Hall effect measurements interpretation of Hall measurements experimental Hall mobilities in (AI, Ga) As/GaAs MDHs - single interface structures, multiple interface structures experimental 2DEG density in AI,Ga) As/GaAs MDHs influences of substrate temperature on transport properties - ternary on top of binary - normal structures, binary on top of ternary - inverted structures the Dx centre effects in (AI, Ga) As/GaAs MDHs (AI,Ga) As/(In,Ga) As and (In,AI) As/(in,Ga)As MDHs high field electron mobility in MDHs high field electron volocity in MDHs - theoretical determination, experimental measurements. Part 7 Non-equilibrium characteristics of modulation loped fets: charge - voltage characteristics current - voltage (I-V) characteristics - normal regime, parallel conduction in the barier layer comparison with experimental I-V characteristics capacitance - voltage characteristics quasi-fermi level bending and its effect on Fet characteristics charge - voltage characteristics for invected modfets anomalies at low temperature (In,Ga) As/ (AI,Ga) as Modfet performance optimization enhanced Schottky barrier for Modfets. Part 8 Microwave characteristics of Modfets: device performance microwave modeling - small-signal model, large-signal model wave equation model - derivation of the wave-equation, solution of the wave equation, Y-parameter calculations, extraction of parameters needed for the AC model, comparison of the measured and calculated data, limitations of the microwave model noise modelling - the DC Fet model, Fet noise modeling, optimization of device parameters, evaluation of noise figures versus frequency, noise temperature. Part 9 Digital integrated circuits: basic inverters GaAs circuits - direct-coupled Fet logic (DCFL), buffered Fet logic (BFC), Schottky diode Fet logic (SDFL), source-coupled Fet logic (SCFL) modfet digital integrated circuits design and simulation of Modfet ICs - precursor logic circuits, comparator circuits, static-random access memory (SRAM) circuits, gate arrays short-channel effects radiation effects - radiation hardness of Modfest, radiation hardness of Modfet inverters and ring oscillators comparison with other technologies - ring oscillators, frequency divider, static random access memory (SRAM), projections." @default.
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- W576095655 date "1991-01-01" @default.
- W576095655 modified "2023-09-23" @default.
- W576095655 title "Principles and technology of MODFETs" @default.
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